Park BG - Search Results

1

Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.

Kim S, Park BG. Kim S, et al. Among authors: park bg. Nanoscale Res Lett. 2016 Dec;11(1):360. doi: 10.1186/s11671-016-1572-9. Epub 2016 Aug 12. Nanoscale Res Lett. 2016. PMID: 27518231 Free PMC article.

2

Nano-cone resistive memory for ultralow power operation.

Kim S, Jung S, Kim MH, Kim TH, Bang S, Cho S, Park BG. Kim S, et al. Among authors: park bg. Nanotechnology. 2017 Mar 24;28(12):125207. doi: 10.1088/1361-6528/aa5e72. Epub 2017 Feb 23. Nanotechnology. 2017. PMID: 28229954

3

Ultralow power switching in a silicon-rich SiN_y/SiN_x double-layer resistive memory device.

Kim S, Chang YF, Kim MH, Bang S, Kim TH, Chen YC, Lee JH, Park BG. Kim S, et al. Among authors: park bg. Phys Chem Chem Phys. 2017 Jul 26;19(29):18988-18995. doi: 10.1039/c7cp03120c. Phys Chem Chem Phys. 2017. PMID: 28702540

4

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.

Kim S, Chang YF, Kim MH, Kim TH, Kim Y, Park BG. Kim S, et al. Among authors: park bg. Materials (Basel). 2017 Apr 26;10(5):459. doi: 10.3390/ma10050459. Materials (Basel). 2017. PMID: 28772819 Free PMC article.

5

Dual Functions of V/SiO_x/AlO_y/p⁺⁺Si Device as Selector and Memory.

Kim S, Lin CY, Kim MH, Kim TH, Kim H, Chen YC, Chang YF, Park BG. Kim S, et al. Among authors: park bg. Nanoscale Res Lett. 2018 Aug 23;13(1):252. doi: 10.1186/s11671-018-2660-9. Nanoscale Res Lett. 2018. PMID: 30141145 Free PMC article.

6

Neuronal dynamics in HfO_x/AlO_y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching.

Kim S , Chen J , Chen YC , Kim MH , Kim H , Kwon MW , Hwang S , Ismail M , Li Y , Miao XS , Chang YF , Park BG . Kim S , et al. Among authors: park bg. Nanoscale. 2018 Dec 20;11(1):237-245. doi: 10.1039/c8nr06694a. Nanoscale. 2018. PMID: 30534752

7

Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach.

Choi YJ, Bang S, Kim TH, Hong K, Kim S, Kim S, Cho S, Park BG. Choi YJ, et al. Among authors: park bg. Phys Chem Chem Phys. 2021 Dec 15;23(48):27234-27243. doi: 10.1039/d1cp04637c. Phys Chem Chem Phys. 2021. PMID: 34853837

8

Analog Synaptic Behavior of a Silicon Nitride Memristor.

Kim S, Kim H, Hwang S, Kim MH, Chang YF, Park BG. Kim S, et al. Among authors: park bg. ACS Appl Mater Interfaces. 2017 Nov 22;9(46):40420-40427. doi: 10.1021/acsami.7b11191. Epub 2017 Nov 8. ACS Appl Mater Interfaces. 2017. PMID: 29086551

9

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

Kim S, Jung S, Kim MH, Chen YC, Chang YF, Ryoo KC, Cho S, Lee JH, Park BG. Kim S, et al. Among authors: park bg. Small. 2018 May;14(19):e1704062. doi: 10.1002/smll.201704062. Epub 2018 Apr 17. Small. 2018. PMID: 29665257

10

Spiking Neural Networks with Unsupervised Learning Based on STDP Using Resistive Synaptic Devices and Analog CMOS Neuron Circuit.

Kwon MW, Baek MH, Hwang S, Kim S, Park BG. Kwon MW, et al. Among authors: park bg. J Nanosci Nanotechnol. 2018 Sep 1;18(9):6588-6592. doi: 10.1166/jnn.2018.15700. J Nanosci Nanotechnol. 2018. PMID: 29677839

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