Williams RS - Search Results

1

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application.

Kim KM, Zhang J, Graves C, Yang JJ, Choi BJ, Hwang CS, Li Z, Williams RS. Kim KM, et al. Among authors: williams rs. Nano Lett. 2016 Nov 9;16(11):6724-6732. doi: 10.1021/acs.nanolett.6b01781. Epub 2016 Oct 17. Nano Lett. 2016. PMID: 27661260

2

Cross-linked polymer replica of a nanoimprint mold at 30 nm half-pitch.

Ge H, Wu W, Li Z, Jung GY, Olynick D, Chen Y, Liddle JA, Wang SY, Williams RS. Ge H, et al. Among authors: williams rs. Nano Lett. 2005 Jan;5(1):179-82. doi: 10.1021/nl048618k. Nano Lett. 2005. PMID: 15792435

3

Improved pattern transfer in nanoimprint lithography at 30 nm half-pitch by substrate-surface functionalization.

Jung GY, Li Z, Wu W, Ganapathiappan S, Li X, Olynick DL, Wang SY, Tong WM, Williams RS. Jung GY, et al. Among authors: williams rs. Langmuir. 2005 Jul 5;21(14):6127-30. doi: 10.1021/la050021c. Langmuir. 2005. PMID: 15982008

4

Circuit fabrication at 17 nm half-pitch by nanoimprint lithography.

Jung GY, Johnston-Halperin E, Wu W, Yu Z, Wang SY, Tong WM, Li Z, Green JE, Sheriff BA, Boukai A, Bunimovich Y, Heath JR, Williams RS. Jung GY, et al. Among authors: williams rs. Nano Lett. 2006 Mar;6(3):351-4. doi: 10.1021/nl052110f. Nano Lett. 2006. PMID: 16522021

5

Plasma-induced formation of Ag nanodots for ultra-high-enhancement surface-enhanced Raman scattering substrates.

Li Z, Tong WM, Stickle WF, Neiman DL, Williams RS, Hunter LL, Talin AA, Li D, Brueck SR. Li Z, et al. Among authors: williams rs. Langmuir. 2007 Apr 24;23(9):5135-8. doi: 10.1021/la063688n. Epub 2007 Mar 27. Langmuir. 2007. PMID: 17385901

6

Selective surface functionalization of silicon nanowires via nanoscale joule heating.

Park I, Li Z, Pisano AP, Williams RS. Park I, et al. Among authors: williams rs. Nano Lett. 2007 Oct;7(10):3106-11. doi: 10.1021/nl071637k. Epub 2007 Sep 26. Nano Lett. 2007. PMID: 17894518

7

An organic/Si nanowire hybrid field configurable transistor.

Lai Q, Li Z, Zhang L, Li X, Stickle WF, Zhu Z, Gu Z, Kamins TI, Williams RS, Chen Y. Lai Q, et al. Among authors: williams rs. Nano Lett. 2008 Mar;8(3):876-80. doi: 10.1021/nl073112y. Epub 2008 Feb 12. Nano Lett. 2008. PMID: 18266332

8

Oxide and carbide formation at titanium/organic monolayer interfaces.

Blackstock JJ, Donley CL, Stickle WF, Ohlberg DA, Yang JJ, Stewart DR, Williams RS. Blackstock JJ, et al. Among authors: williams rs. J Am Chem Soc. 2008 Mar 26;130(12):4041-7. doi: 10.1021/ja710448e. Epub 2008 Mar 5. J Am Chem Soc. 2008. PMID: 18318537

9

Memristive switching mechanism for metal/oxide/metal nanodevices.

Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Williams RS. Yang JJ, et al. Among authors: williams rs. Nat Nanotechnol. 2008 Jul;3(7):429-33. doi: 10.1038/nnano.2008.160. Epub 2008 Jun 15. Nat Nanotechnol. 2008. PMID: 18654568

10

Sub-10 nm nanoimprint lithography by wafer bowing.

Wu W, Tong WM, Bartman J, Chen Y, Walmsley R, Yu Z, Xia Q, Park I, Picciotto C, Gao J, Wang SY, Morecroft D, Yang J, Berggren KK, Williams RS. Wu W, et al. Among authors: williams rs. Nano Lett. 2008 Nov;8(11):3865-9. doi: 10.1021/nl802295n. Epub 2008 Oct 7. Nano Lett. 2008. PMID: 18837563

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