High performance of graphene oxide-doped silicon oxide-based resistance random access memory.
Zhang R, Chang KC, Chang TC, Tsai TM, Chen KH, Lou JC, Chen JH, Young TF, Shih CC, Yang YL, Pan YC, Chu TJ, Huang SY, Pan CH, Su YT, Syu YE, Sze SM.
Zhang R, et al. Among authors: chang tc, chang kc.
Nanoscale Res Lett. 2013 Nov 21;8(1):497. doi: 10.1186/1556-276X-8-497.
Nanoscale Res Lett. 2013.
PMID: 24261454
Free PMC article.