Gossard AC - Search Results

1

Electrically pumped continuous-wave 1.3 μm quantum-dot lasers epitaxially grown on on-axis (001) GaP/Si.

Liu AY, Peters J, Huang X, Jung D, Norman J, Lee ML, Gossard AC, Bowers JE. Liu AY, et al. Among authors: gossard ac. Opt Lett. 2017 Jan 15;42(2):338-341. doi: 10.1364/OL.42.000338. Opt Lett. 2017. PMID: 28081107

2

Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.

Wan Y, Li Q, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Wan Y, et al. Among authors: gossard ac. Opt Lett. 2016 Apr 1;41(7):1664-7. doi: 10.1364/OL.41.001664. Opt Lett. 2016. PMID: 27192313

3

1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon.

Li Q, Wan Y, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Li Q, et al. Among authors: gossard ac. Opt Express. 2016 Sep 5;24(18):21038-45. doi: 10.1364/OE.24.021038. Opt Express. 2016. PMID: 27607707 Free article.

4

Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.

Norman J, Kennedy MJ, Selvidge J, Li Q, Wan Y, Liu AY, Callahan PG, Echlin MP, Pollock TM, Lau KM, Gossard AC, Bowers JE. Norman J, et al. Among authors: gossard ac. Opt Express. 2017 Feb 20;25(4):3927-3934. doi: 10.1364/OE.25.003927. Opt Express. 2017. PMID: 28241602 Free article.

5

Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon.

Liu AY, Komljenovic T, Davenport ML, Gossard AC, Bowers JE. Liu AY, et al. Among authors: gossard ac. Opt Express. 2017 May 1;25(9):9535-9543. doi: 10.1364/OE.25.009535. Opt Express. 2017. PMID: 28468336 Free article.

6

O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si.

Wan Y, Jung D, Norman J, Shang C, MacFarlane I, Li Q, Kennedy MJ, Gossard AC, Lau KM, Bowers JE. Wan Y, et al. Among authors: gossard ac. Opt Express. 2017 Oct 30;25(22):26853-26860. doi: 10.1364/OE.25.026853. Opt Express. 2017. PMID: 29092170 Free article.

7

Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon.

Inoue D, Jung D, Norman J, Wan Y, Nishiyama N, Arai S, Gossard AC, Bowers JE. Inoue D, et al. Among authors: gossard ac. Opt Express. 2018 Mar 19;26(6):7022-7033. doi: 10.1364/OE.26.007022. Opt Express. 2018. PMID: 29609387 Free article.

8

Electro-optic polarization tuning of microcavities with a single quantum dot.

Frey JA, Snijders HJ, Norman J, Gossard AC, Bowers JE, Löffler W, Bouwmeester D. Frey JA, et al. Among authors: gossard ac. Opt Lett. 2018 Sep 1;43(17):4280-4283. doi: 10.1364/OL.43.004280. Opt Lett. 2018. PMID: 30160707

9

Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates.

Wan Y, Zhang Z, Chao R, Norman J, Jung D, Shang C, Li Q, Kennedy MJ, Liang D, Zhang C, Shi JW, Gossard AC, Lau KM, Bowers JE. Wan Y, et al. Among authors: gossard ac. Opt Express. 2017 Oct 30;25(22):27715-27723. doi: 10.1364/OE.25.027715. Opt Express. 2017. PMID: 29092242 Free article.

10

ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5 THz single shot bandwidth and emitted terahertz power of 164 µW.

Nandi U, Dutzi K, Deninger A, Lu H, Norman J, Gossard AC, Vieweg N, Preu S. Nandi U, et al. Among authors: gossard ac. Opt Lett. 2020 May 15;45(10):2812-2815. doi: 10.1364/OL.388870. Opt Lett. 2020. PMID: 32412473

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