Han J - Search Results

1

High-Q, Low-Threshold Monolithic Perovskite Thin-Film Vertical-Cavity Lasers.

Chen S, Zhang C, Lee J, Han J, Nurmikko A. Chen S, et al. Among authors: han j. Adv Mater. 2017 Apr;29(16). doi: 10.1002/adma.201604781. Epub 2017 Feb 17. Adv Mater. 2017. PMID: 28211117

2

A wafer-level integrated white-light-emitting diode incorporating colloidal quantum dots as a nanocomposite luminescent material.

Dang C, Lee J, Zhang Y, Han J, Breen C, Steckel JS, Coe-Sullivan S, Nurmikko A. Dang C, et al. Among authors: han j. Adv Mater. 2012 Nov 20;24(44):5915-8. doi: 10.1002/adma.201202354. Epub 2012 Aug 24. Adv Mater. 2012. PMID: 22927319

3

Evolutionary selection growth: towards template-insensitive preparation of single-crystal layers.

Leung B, Song J, Zhang Y, Han J. Leung B, et al. Among authors: han j. Adv Mater. 2013 Mar 6;25(9):1285-9. doi: 10.1002/adma.201204047. Epub 2012 Dec 10. Adv Mater. 2013. PMID: 23233293 No abstract available.

4

Significantly improved luminescence properties of nitrogen-polar (0001̅) InGaN multiple quantum wells grown by pulsed metalorganic chemical vapor deposition.

Song J, Chang SP, Zhang C, Hsu TC, Han J. Song J, et al. Among authors: han j. ACS Appl Mater Interfaces. 2015 Jan 14;7(1):273-8. doi: 10.1021/am506162z. Epub 2014 Dec 22. ACS Appl Mater Interfaces. 2015. PMID: 25494953

5

InGaN/GaN microdisks enabled by nanoporous GaN cladding.

Yuan G, Zhang C, Xiong K, Han J. Yuan G, et al. Among authors: han j. Opt Lett. 2018 Nov 15;43(22):5567-5570. doi: 10.1364/OL.43.005567. Opt Lett. 2018. PMID: 30439902

6

Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire.

Song J, Choi J, Zhang C, Deng Z, Xie Y, Han J. Song J, et al. Among authors: han j. ACS Appl Mater Interfaces. 2019 Sep 11;11(36):33140-33146. doi: 10.1021/acsami.9b11316. Epub 2019 Aug 27. ACS Appl Mater Interfaces. 2019. PMID: 31454216

7

Nitrogen-Polar (000 1 ¯ ) GaN Grown on c-Plane Sapphire with a High-Temperature AlN Buffer.

Song J, Han J. Song J, et al. Among authors: han j. Materials (Basel). 2017 Mar 2;10(3):252. doi: 10.3390/ma10030252. Materials (Basel). 2017. PMID: 28772612 Free PMC article.

8

Mechanical properties of nanoporous GaN and its application for separation and transfer of GaN thin films.

Huang S, Zhang Y, Leung B, Yuan G, Wang G, Jiang H, Fan Y, Sun Q, Wang J, Xu K, Han J. Huang S, et al. Among authors: han j. ACS Appl Mater Interfaces. 2013 Nov 13;5(21):11074-9. doi: 10.1021/am4032345. Epub 2013 Oct 28. ACS Appl Mater Interfaces. 2013. PMID: 24125198

9

Semipolar (202̅1̅) GaN and InGaN Light-Emitting Diodes Grown on Sapphire.

Song J, Choi J, Xiong K, Xie Y, Cha JJ, Han J. Song J, et al. Among authors: han j. ACS Appl Mater Interfaces. 2017 Apr 26;9(16):14088-14092. doi: 10.1021/acsami.7b01336. Epub 2017 Apr 11. ACS Appl Mater Interfaces. 2017. PMID: 28361536

10

Vertical InGaN Light-Emitting Diode with Hybrid Distributed Bragg Reflectors.

Shiu GY, Ke Y, Chen KT, Wang CJ, Kao YC, Chen H, Han J, Lin CF. Shiu GY, et al. Among authors: han j. ACS Omega. 2024 Jul 2;9(28):30183-30189. doi: 10.1021/acsomega.3c10055. eCollection 2024 Jul 16. ACS Omega. 2024. PMID: 39035975 Free PMC article.

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