Zhou P - Search Results

1

Various and Tunable Transport Properties of WSe₂ Transistor Formed by Metal Contacts.

Liu C, Yan X, Zhang E, Song X, Sun Q, Ding S, Bao W, Xiu F, Zhou P, Zhang DW. Liu C, et al. Among authors: zhou p. Small. 2017 May;13(18). doi: 10.1002/smll.201604319. Epub 2017 Mar 10. Small. 2017. PMID: 28296162

2

Hypoglycemic effect and mechanism of a proteoglycan from ganoderma lucidum on streptozotocin-induced type 2 diabetic rats.

Teng BS, Wang CD, Zhang D, Wu JS, Pan D, Pan LF, Yang HJ, Zhou P. Teng BS, et al. Among authors: zhou p. Eur Rev Med Pharmacol Sci. 2012 Feb;16(2):166-75. Eur Rev Med Pharmacol Sci. 2012. PMID: 22428467

3

Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications.

Ding SJ, Chen HB, Cui XM, Chen S, Sun QQ, Zhou P, Lu HL, Zhang DW, Shen C. Ding SJ, et al. Among authors: zhou p. Nanoscale Res Lett. 2013 Feb 15;8(1):80. doi: 10.1186/1556-276X-8-80. Nanoscale Res Lett. 2013. PMID: 23413837 Free PMC article.

4

Effect of concurrent joule heat and charge trapping on RESET for NbAlO fabricated by atomic layer deposition.

Zhou P, Ye L, Sun QQ, Wang PF, Jiang AQ, Ding SJ, Zhang DW. Zhou P, et al. Nanoscale Res Lett. 2013 Feb 19;8(1):91. doi: 10.1186/1556-276X-8-91. Nanoscale Res Lett. 2013. PMID: 23421401 Free PMC article.

5

High-performance bilayer flexible resistive random access memory based on low-temperature thermal atomic layer deposition.

Fang RC, Sun QQ, Zhou P, Yang W, Wang PF, Zhang DW. Fang RC, et al. Among authors: zhou p. Nanoscale Res Lett. 2013 Feb 19;8(1):92. doi: 10.1186/1556-276X-8-92. Nanoscale Res Lett. 2013. PMID: 23421424 Free PMC article.

6

Modulation in current density of metal/n-SiC contact by inserting Al2O3 interfacial layer.

Zheng S, Sun QQ, Yang W, Zhou P, Lu HL, Zhang DW. Zheng S, et al. Among authors: zhou p. Nanoscale Res Lett. 2013 Mar 2;8(1):116. doi: 10.1186/1556-276X-8-116. Nanoscale Res Lett. 2013. PMID: 23452618 Free PMC article.

7

A semi-floating gate transistor for low-voltage ultrafast memory and sensing operation.

Wang PF, Lin X, Liu L, Sun QQ, Zhou P, Liu XY, Liu W, Gong Y, Zhang DW. Wang PF, et al. Among authors: zhou p. Science. 2013 Aug 9;341(6146):640-3. doi: 10.1126/science.1240961. Science. 2013. PMID: 23929978

8

Atomic scale investigation of a graphene nano-ribbon based high efficiency spin valve.

Sun QQ, Wang LH, Yang W, Zhou P, Wang PF, Ding SJ, Zhang DW. Sun QQ, et al. Among authors: zhou p. Sci Rep. 2013 Oct 16;3:2921. doi: 10.1038/srep02921. Sci Rep. 2013. PMID: 24132194 Free PMC article.

9

Direct deposition of uniform high-κ dielectrics on graphene.

Zhou P, Yang S, Sun Q, Chen L, Wang P, Ding S, Zhang DW. Zhou P, et al. Sci Rep. 2014 Sep 29;4:6448. doi: 10.1038/srep06448. Sci Rep. 2014. PMID: 25264077 Free PMC article.

10

Tunable charge-trap memory based on few-layer MoS2.

Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang DW, Zhou P, Xiu F. Zhang E, et al. Among authors: zhou p. ACS Nano. 2015 Jan 27;9(1):612-9. doi: 10.1021/nn5059419. Epub 2014 Dec 17. ACS Nano. 2015. PMID: 25496773

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