Liang F - Search Results

1

hnRNP I regulates neonatal immune adaptation and prevents colitis and colorectal cancer.

Jin Z, Liang F, Yang J, Mei W. Jin Z, et al. Among authors: liang f. PLoS Genet. 2017 Mar 15;13(3):e1006672. doi: 10.1371/journal.pgen.1006672. eCollection 2017 Mar. PLoS Genet. 2017. PMID: 28296893 Free PMC article.

2

The Influence Mechanism of Quantum Well Growth and Annealing Temperature on In Migration and Stress Modulation Behavior.

Yan L, Liang F, Yang J, Chen P, Jiang D, Zhao D. Yan L, et al. Among authors: liang f. Nanomaterials (Basel). 2024 Apr 18;14(8):703. doi: 10.3390/nano14080703. Nanomaterials (Basel). 2024. PMID: 38668197 Free PMC article.

3

Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu W, Li X, Liu S, Xing Y, Zhang L, Li M, Zhang J. Liang F, et al. Appl Opt. 2017 May 10;56(14):4197-4200. doi: 10.1364/AO.56.004197. Appl Opt. 2017. PMID: 29047555

4

Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.

Liu W, Zhao D, Jiang D, Shi D, Zhu J, Liu Z, Chen P, Yang J, Liang F, Liu S, Xing Y, Zhang L, Wang W, Li M, Zhang Y, Du G. Liu W, et al. Among authors: liang f. Opt Express. 2018 Feb 5;26(3):3427-3434. doi: 10.1364/OE.26.003427. Opt Express. 2018. PMID: 29401870 Free article.

5

Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells.

Peng L, Zhao D, Jiang D, Zhu J, Liu Z, Chen P, Yang J, Liu W, Liang F, Xing Y, Liu S, Zhang L, Wang W, Li M, Zhang Y, Du G. Peng L, et al. Among authors: liang f. Opt Express. 2018 Aug 20;26(17):21736-21744. doi: 10.1364/OE.26.021736. Opt Express. 2018. PMID: 30130875 Free article.

6

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, Li M, Zhang Y, Du G. Liang F, et al. Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744. Nanomaterials (Basel). 2018. PMID: 30235861 Free PMC article.

7

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L. Liang F, et al. Nanomaterials (Basel). 2018 Dec 10;8(12):1026. doi: 10.3390/nano8121026. Nanomaterials (Basel). 2018. PMID: 30544659 Free PMC article.

8

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.

Xing Y, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liang F, Liu S, Zhang L. Xing Y, et al. Among authors: liang f. Nanoscale Res Lett. 2019 Mar 12;14(1):88. doi: 10.1186/s11671-019-2919-9. Nanoscale Res Lett. 2019. PMID: 30874975 Free PMC article.

9

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process.

Liu S, Yang J, Zhao D, Jiang D, Zhu J, Liang F, Chen P, Liu Z, Xing Y, Peng L, Zhang L. Liu S, et al. Among authors: liang f. Nanoscale Res Lett. 2019 Aug 16;14(1):280. doi: 10.1186/s11671-019-3095-7. Nanoscale Res Lett. 2019. PMID: 31420760 Free PMC article.

10

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.

Zhang Y, Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Yang J, Liu S. Zhang Y, et al. Among authors: liang f. Nanoscale Res Lett. 2020 Feb 10;15(1):38. doi: 10.1186/s11671-020-3263-9. Nanoscale Res Lett. 2020. PMID: 32040646 Free PMC article.

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