Cherkashin N - Search Results

1

Electron microscopy by specimen design: application to strain measurements.

Cherkashin N, Denneulin T, Hÿtch MJ. Cherkashin N, et al. Sci Rep. 2017 Sep 29;7(1):12394. doi: 10.1038/s41598-017-12695-8. Sci Rep. 2017. PMID: 28963544 Free PMC article.

2

Dynamic scattering theory for dark-field electron holography of 3D strain fields.

Lubk A, Javon E, Cherkashin N, Reboh S, Gatel C, Hÿtch M. Lubk A, et al. Among authors: cherkashin n. Ultramicroscopy. 2014 Jan;136:42-9. doi: 10.1016/j.ultramic.2013.07.007. Epub 2013 Jul 29. Ultramicroscopy. 2014. PMID: 24012934

3

Dynamical effects in strain measurements by dark-field electron holography.

Javon E, Lubk A, Cours R, Reboh S, Cherkashin N, Houdellier F, Gatel C, Hÿtch MJ. Javon E, et al. Among authors: cherkashin n. Ultramicroscopy. 2014 Dec;147:70-85. doi: 10.1016/j.ultramic.2014.06.005. Epub 2014 Jun 30. Ultramicroscopy. 2014. PMID: 25062040

4

High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

Renard C, Molière T, Cherkashin N, Alvarez J, Vincent L, Jaffré A, Hallais G, Connolly JP, Mencaraglia D, Bouchier D. Renard C, et al. Among authors: cherkashin n. Sci Rep. 2016 May 4;6:25328. doi: 10.1038/srep25328. Sci Rep. 2016. PMID: 27142097 Free PMC article.

5

Influence of electromechanical coupling on optical properties of InGaN quantum-dot based light-emitting diodes.

Barettin D, Maur MA, Carlo AD, Pecchia A, Tsatsulnikov AF, Sakharov AV, Lundin WV, Nikolaev AE, Usov SO, Cherkashin N, Hÿtch MJ, Karpov SY. Barettin D, et al. Among authors: cherkashin n. Nanotechnology. 2017 Jan 6;28(1):015701. doi: 10.1088/0957-4484/28/1/015701. Epub 2016 Nov 29. Nanotechnology. 2017. PMID: 27897139

6

Carrier transport and emission efficiency in InGaN quantum-dot based light-emitting diodes.

Barettin D, Auf der Maur M, di Carlo A, Pecchia A, Tsatsulnikov AF, Lundin WV, Sakharov AV, Nikolaev AE, Korytov M, Cherkashin N, Hÿtch MJ, Karpov SY. Barettin D, et al. Among authors: cherkashin n. Nanotechnology. 2017 Jul 7;28(27):275201. doi: 10.1088/1361-6528/aa75a8. Nanotechnology. 2017. PMID: 28612754

7

Room-temperature yellow-orange (In,Ga,Al)P-GaP laser diodes grown on (n11) GaAs substrates.

Ledentsov NN, Shchukin VA, Shernyakov YM, Kulagina MM, Payusov AS, Gordeev NY, Maximov MV, Zhukov AE, Denneulin T, Cherkashin N. Ledentsov NN, et al. Among authors: cherkashin n. Opt Express. 2018 May 28;26(11):13985-13994. doi: 10.1364/OE.26.013985. Opt Express. 2018. PMID: 29877443 Free article.

8

Quantitative mapping of strain and displacement fields over HR-TEM and HR-STEM images of crystals with reference to a virtual lattice.

Cherkashin N, Louiset A, Chmielewski A, Kim DJ, Dubourdieu C, Schamm-Chardon S. Cherkashin N, et al. Ultramicroscopy. 2023 Nov;253:113778. doi: 10.1016/j.ultramic.2023.113778. Epub 2023 Jun 10. Ultramicroscopy. 2023. PMID: 37329809

9

Imaging Si nanoparticles embedded in SiO(2) layers by (S)TEM-EELS.

Schamm S, Bonafos C, Coffin H, Cherkashin N, Carrada M, Ben Assayag G, Claverie A, Tencé M, Colliex C. Schamm S, et al. Among authors: cherkashin n. Ultramicroscopy. 2008 Mar;108(4):346-57. doi: 10.1016/j.ultramic.2007.05.008. Epub 2007 May 29. Ultramicroscopy. 2008. PMID: 17616256

10

Electromechanically Coupled III-N Quantum Dots.

Barettin D, Sakharov AV, Tsatsulnikov AF, Nikolaev AE, Cherkashin N. Barettin D, et al. Among authors: cherkashin n. Nanomaterials (Basel). 2023 Jan 5;13(2):241. doi: 10.3390/nano13020241. Nanomaterials (Basel). 2023. PMID: 36677994 Free PMC article.

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