Chang YF - Search Results

1

Analog Synaptic Behavior of a Silicon Nitride Memristor.

Kim S, Kim H, Hwang S, Kim MH, Chang YF, Park BG. Kim S, et al. Among authors: chang yf. ACS Appl Mater Interfaces. 2017 Nov 22;9(46):40420-40427. doi: 10.1021/acsami.7b11191. Epub 2017 Nov 8. ACS Appl Mater Interfaces. 2017. PMID: 29086551

2

Ultralow power switching in a silicon-rich SiN_y/SiN_x double-layer resistive memory device.

Kim S, Chang YF, Kim MH, Bang S, Kim TH, Chen YC, Lee JH, Park BG. Kim S, et al. Among authors: chang yf. Phys Chem Chem Phys. 2017 Jul 26;19(29):18988-18995. doi: 10.1039/c7cp03120c. Phys Chem Chem Phys. 2017. PMID: 28702540

3

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.

Kim S, Chang YF, Kim MH, Kim TH, Kim Y, Park BG. Kim S, et al. Among authors: chang yf. Materials (Basel). 2017 Apr 26;10(5):459. doi: 10.3390/ma10050459. Materials (Basel). 2017. PMID: 28772819 Free PMC article.

4

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

Kim S, Jung S, Kim MH, Chen YC, Chang YF, Ryoo KC, Cho S, Lee JH, Park BG. Kim S, et al. Among authors: chang yf. Small. 2018 May;14(19):e1704062. doi: 10.1002/smll.201704062. Epub 2018 Apr 17. Small. 2018. PMID: 29665257

5

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications.

Chen YC , Hu ST , Lin CY , Fowler B , Huang HC , Lin CC , Kim S , Chang YF , Lee JC . Chen YC , et al. Among authors: chang yf. Nanoscale. 2018 Aug 23;10(33):15608-15614. doi: 10.1039/c8nr04766a. Nanoscale. 2018. PMID: 30090909

6

Dual Functions of V/SiO_x/AlO_y/p⁺⁺Si Device as Selector and Memory.

Kim S, Lin CY, Kim MH, Kim TH, Kim H, Chen YC, Chang YF, Park BG. Kim S, et al. Among authors: chang yf. Nanoscale Res Lett. 2018 Aug 23;13(1):252. doi: 10.1186/s11671-018-2660-9. Nanoscale Res Lett. 2018. PMID: 30141145 Free PMC article.

7

Neuronal dynamics in HfO_x/AlO_y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching.

Kim S , Chen J , Chen YC , Kim MH , Kim H , Kwon MW , Hwang S , Ismail M , Li Y , Miao XS , Chang YF , Park BG . Kim S , et al. Among authors: chang yf. Nanoscale. 2018 Dec 20;11(1):237-245. doi: 10.1039/c8nr06694a. Nanoscale. 2018. PMID: 30534752

8

Programmable Retention Characteristics in MoS₂-Based Atomristors for Neuromorphic and Reservoir Computing Systems.

Lee Y, Huang Y, Chang YF, Yang SJ, Ignacio ND, Kutagulla S, Mohan S, Kim S, Lee J, Akinwande D, Kim S. Lee Y, et al. Among authors: chang yf. ACS Nano. 2024 Jun 4;18(22):14327-14338. doi: 10.1021/acsnano.4c00333. Epub 2024 May 20. ACS Nano. 2024. PMID: 38767980

9

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

Chang YF, Fowler B, Chen YC, Zhou F, Pan CH, Chang TC, Lee JC. Chang YF, et al. Among authors: chang tc. Sci Rep. 2016 Feb 16;6:21268. doi: 10.1038/srep21268. Sci Rep. 2016. PMID: 26880381 Free PMC article.

10

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.

Zhou F, Chang YF, Chen YC, Wu X, Zhang Y, Fowler B, Lee JC. Zhou F, et al. Among authors: chang yf. Phys Chem Chem Phys. 2016 Jan 14;18(2):700-3. doi: 10.1039/c5cp06507k. Phys Chem Chem Phys. 2016. PMID: 26659556

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