Cho S - Search Results

1

Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate.

Kim S, Jung S, Kim MH, Chen YC, Chang YF, Ryoo KC, Cho S, Lee JH, Park BG. Kim S, et al. Among authors: cho s. Small. 2018 May;14(19):e1704062. doi: 10.1002/smll.201704062. Epub 2018 Apr 17. Small. 2018. PMID: 29665257

2

Room-temperature electroluminescence from germanium in an Al(0.3)Ga(0.7)As/Ge heterojunction light-emitting diode by Γ-valley transport.

Cho S, Park BG, Yang C, Cheung S, Yoon E, Kamins TI, Yoo SJ, Harris JS Jr. Cho S, et al. Opt Express. 2012 Jul 2;20(14):14921-7. doi: 10.1364/OE.20.014921. Opt Express. 2012. PMID: 22772186 Free article.

3

Nano-cone resistive memory for ultralow power operation.

Kim S, Jung S, Kim MH, Kim TH, Bang S, Cho S, Park BG. Kim S, et al. Among authors: cho s. Nanotechnology. 2017 Mar 24;28(12):125207. doi: 10.1088/1361-6528/aa5e72. Epub 2017 Feb 23. Nanotechnology. 2017. PMID: 28229954

4

InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

Kim S, Cho S, Jeong J, Kim S, Hwang S, Kim G, Yoon S, Park BG. Kim S, et al. Among authors: cho s. Opt Express. 2017 Mar 20;25(6):6440-6449. doi: 10.1364/OE.25.006440. Opt Express. 2017. PMID: 28380994 Free article.

5

Design and Characterization of Semi-Floating-Gate Synaptic Transistor.

Cho Y, Lee JY, Yu E, Han JH, Baek MH, Cho S, Park BG. Cho Y, et al. Among authors: cho s. Micromachines (Basel). 2019 Jan 7;10(1):32. doi: 10.3390/mi10010032. Micromachines (Basel). 2019. PMID: 30621033 Free PMC article.

6

Design Optimization and Analysis of InGaAs/InAs/InGaAs Heterojunction-Based Electron Hole Bilayer Tunneling FETs.

Seo JH, Yoon YJ, Cho S, Kang IM, Lee JH. Seo JH, et al. Among authors: cho s. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6070-6076. doi: 10.1166/jnn.2019.17021. J Nanosci Nanotechnol. 2019. PMID: 31026910

7

Analytically and empirically consistent characterization of the resistive switching mechanism in a Ag conducting-bridge random-access memory device through a pseudo-liquid interpretation approach.

Choi YJ, Bang S, Kim TH, Hong K, Kim S, Kim S, Cho S, Park BG. Choi YJ, et al. Among authors: cho s. Phys Chem Chem Phys. 2021 Dec 15;23(48):27234-27243. doi: 10.1039/d1cp04637c. Phys Chem Chem Phys. 2021. PMID: 34853837

8

Medium-Temperature-Oxidized GeO_x Resistive-Switching Random-Access Memory and Its Applicability in Processing-in-Memory Computing.

Udaya Mohanan K, Cho S, Park BG. Udaya Mohanan K, et al. Among authors: cho s. Nanoscale Res Lett. 2022 Jul 5;17(1):63. doi: 10.1186/s11671-022-03701-8. Nanoscale Res Lett. 2022. PMID: 35789299 Free PMC article.

9

Short-Term Memory Characteristics of IGZO-Based Three-Terminal Devices.

Pyo J, Bae JH, Kim S, Cho S. Pyo J, et al. Among authors: cho s. Materials (Basel). 2023 Feb 1;16(3):1249. doi: 10.3390/ma16031249. Materials (Basel). 2023. PMID: 36770256 Free PMC article.

10

Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems.

Yang S, Kim T, Kim S, Chung D, Kim TH, Lee JK, Kim S, Ismail M, Mahata C, Kim S, Cho S. Yang S, et al. Among authors: cho s. Nanoscale. 2023 Aug 17;15(32):13239-13251. doi: 10.1039/d3nr01930f. Nanoscale. 2023. PMID: 37525621

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