Borgström MT - Search Results

1

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

Otnes G, Barrigón E, Sundvall C, Svensson KE, Heurlin M, Siefer G, Samuelson L, Åberg I, Borgström MT. Otnes G, et al. Among authors: borgstrom mt. Nano Lett. 2018 May 9;18(5):3038-3046. doi: 10.1021/acs.nanolett.8b00494. Epub 2018 Apr 27. Nano Lett. 2018. PMID: 29701974 Free article.

2

Direct imaging of the atomic structure inside a nanowire by scanning tunnelling microscopy.

Mikkelsen A, Sköld N, Ouattara L, Borgström M, Andersen JN, Samuelson L, Seifert W, Lundgren E. Mikkelsen A, et al. Nat Mater. 2004 Aug;3(8):519-23. doi: 10.1038/nmat1164. Epub 2004 Jul 4. Nat Mater. 2004. PMID: 15235596

3

High-performance single nanowire tunnel diodes.

Wallentin J, Persson JM, Wagner JB, Samuelson L, Deppert K, Borgström MT. Wallentin J, et al. Among authors: borgstrom mt. Nano Lett. 2010 Mar 10;10(3):974-9. doi: 10.1021/nl903941b. Nano Lett. 2010. PMID: 20163125

4

Probing strain in bent semiconductor nanowires with Raman spectroscopy.

Chen J, Conache G, Pistol ME, Gray SM, Borgström MT, Xu H, Xu HQ, Samuelson L, Håkanson U. Chen J, et al. Among authors: borgstrom mt. Nano Lett. 2010 Apr 14;10(4):1280-6. doi: 10.1021/nl904040y. Nano Lett. 2010. PMID: 20192231

5

The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.

Thelander C, Dick KA, Borgström MT, Fröberg LE, Caroff P, Nilsson HA, Samuelson L. Thelander C, et al. Among authors: borgstrom mt. Nanotechnology. 2010 May 21;21(20):205703. doi: 10.1088/0957-4484/21/20/205703. Epub 2010 Apr 23. Nanotechnology. 2010. PMID: 20413840

6

Changes in contact angle of seed particle correlated with increased zincblende formation in doped InP nanowires.

Wallentin J, Ek M, Wallenberg LR, Samuelson L, Deppert K, Borgström MT. Wallentin J, et al. Among authors: borgstrom mt. Nano Lett. 2010 Dec 8;10(12):4807-12. doi: 10.1021/nl101747z. Epub 2010 Nov 2. Nano Lett. 2010. PMID: 21043510

7

Gate-induced fermi level tuning in InP nanowires at efficiency close to the thermal limit.

Storm K, Nylund G, Borgström M, Wallentin J, Fasth C, Thelander C, Samuelson L. Storm K, et al. Nano Lett. 2011 Mar 9;11(3):1127-30. doi: 10.1021/nl104032s. Epub 2011 Feb 9. Nano Lett. 2011. PMID: 21306112

8

Axial InP nanowire tandem junction grown on a silicon substrate.

Heurlin M, Wickert P, Fält S, Borgström MT, Deppert K, Samuelson L, Magnusson MH. Heurlin M, et al. Among authors: borgstrom mt. Nano Lett. 2011 May 11;11(5):2028-31. doi: 10.1021/nl2004219. Epub 2011 Apr 1. Nano Lett. 2011. PMID: 21456545

9

Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires.

Wallentin J, Mergenthaler K, Ek M, Wallenberg LR, Samuelson L, Deppert K, Pistol ME, Borgström MT. Wallentin J, et al. Among authors: borgstrom mt. Nano Lett. 2011 Jun 8;11(6):2286-90. doi: 10.1021/nl200492g. Epub 2011 May 23. Nano Lett. 2011. PMID: 21604708

10

Precursor evaluation for in situ InP nanowire doping.

Borgström MT, Norberg E, Wickert P, Nilsson HA, Trägårdh J, Dick KA, Statkute G, Ramvall P, Deppert K, Samuelson L. Borgström MT, et al. Nanotechnology. 2008 Nov 5;19(44):445602. doi: 10.1088/0957-4484/19/44/445602. Epub 2008 Sep 29. Nanotechnology. 2008. PMID: 21832734

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