Ho JC - Search Results

1

Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires.

Yang ZX, Yin Y, Sun J, Bian L, Han N, Zhou Z, Shu L, Wang F, Chen Y, Song A, Ho JC. Yang ZX, et al. Among authors: ho jc. Sci Rep. 2018 May 2;8(1):6928. doi: 10.1038/s41598-018-25209-x. Sci Rep. 2018. PMID: 29720609 Free PMC article.

2

Facile synthesis and growth mechanism of Ni-catalyzed GaAs nanowires on non-crystalline substrates.

Han N, Wang F, Hui AT, Hou JJ, Shan G, Xiu F, Hung T, Ho JC. Han N, et al. Among authors: ho jc. Nanotechnology. 2011 Jul 15;22(28):285607. doi: 10.1088/0957-4484/22/28/285607. Epub 2011 Jun 8. Nanotechnology. 2011. PMID: 21654028

3

Highly active and enhanced photocatalytic silicon nanowire arrays.

Wang FY, Yang QD, Xu G, Lei NY, Tsang YK, Wong NB, Ho JC. Wang FY, et al. Among authors: ho jc. Nanoscale. 2011 Aug;3(8):3269-76. doi: 10.1039/c1nr10266d. Epub 2011 Jun 30. Nanoscale. 2011. PMID: 21717011

4

Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

Hou JJ, Han N, Wang F, Xiu F, Yip S, Hui AT, Hung T, Ho JC. Hou JJ, et al. Among authors: ho jc. ACS Nano. 2012 Apr 24;6(4):3624-30. doi: 10.1021/nn300966j. Epub 2012 Mar 29. ACS Nano. 2012. PMID: 22443352

5

Controllable p-n switching behaviors of GaAs nanowires via an interface effect.

Han N, Wang F, Hou JJ, Xiu F, Yip S, Hui AT, Hung T, Ho JC. Han N, et al. Among authors: ho jc. ACS Nano. 2012 May 22;6(5):4428-33. doi: 10.1021/nn3011416. Epub 2012 Apr 27. ACS Nano. 2012. PMID: 22519669

6

Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.

Hou JJ, Wang F, Han N, Xiu F, Yip S, Fang M, Lin H, Hung TF, Ho JC. Hou JJ, et al. Among authors: ho jc. ACS Nano. 2012 Oct 23;6(10):9320-5. doi: 10.1021/nn304174g. Epub 2012 Oct 4. ACS Nano. 2012. PMID: 23020254

7

Large-scale and uniform preparation of pure-phase wurtzite GaAs NWs on non-crystalline substrates.

Han N, Hou JJ, Wang F, Yip S, Lin H, Fang M, Xiu F, Shi X, Hung T, Ho JC. Han N, et al. Among authors: ho jc. Nanoscale Res Lett. 2012 Nov 21;7(1):632. doi: 10.1186/1556-276X-7-632. Nanoscale Res Lett. 2012. PMID: 23171521 Free PMC article.

8

Influence of catalyst choices on transport behaviors of InAs NWs for high-performance nanoscale transistors.

Chen SY, Wang CY, Ford AC, Chou JC, Wang YC, Wang FY, Ho JC, Wang HC, Javey A, Gan JY, Chen LJ, Chueh YL. Chen SY, et al. Among authors: ho jc. Phys Chem Chem Phys. 2013 Feb 28;15(8):2654-9. doi: 10.1039/c2cp44213b. Epub 2013 Jan 22. Phys Chem Chem Phys. 2013. PMID: 23340577

9

Tunable electronic transport properties of metal-cluster-decorated III-V nanowire transistors.

Han N, Wang F, Hou JJ, Yip SP, Lin H, Xiu F, Fang M, Yang Z, Shi X, Dong G, Hung TF, Ho JC. Han N, et al. Among authors: ho jc. Adv Mater. 2013 Aug 27;25(32):4445-51. doi: 10.1002/adma.201301362. Epub 2013 Jun 20. Adv Mater. 2013. PMID: 23784849

10

Surface roughness induced electron mobility degradation in InAs nanowires.

Wang F, Yip S, Han N, Fok K, Lin H, Hou JJ, Dong G, Hung T, Chan KS, Ho JC. Wang F, et al. Among authors: ho jc. Nanotechnology. 2013 Sep 20;24(37):375202. doi: 10.1088/0957-4484/24/37/375202. Epub 2013 Aug 21. Nanotechnology. 2013. PMID: 23965340

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