Zhang S - Search Results

1

High-Performance Quantum Dot Light-Emitting Diodes Based on Al-Doped ZnO Nanoparticles Electron Transport Layer.

Sun Y, Wang W, Zhang H, Su Q, Wei J, Liu P, Chen S, Zhang S. Sun Y, et al. Among authors: zhang s, zhang h. ACS Appl Mater Interfaces. 2018 Jun 6;10(22):18902-18909. doi: 10.1021/acsami.8b04754. Epub 2018 May 24. ACS Appl Mater Interfaces. 2018. PMID: 29745643

2

Efficient quantum dot light-emitting diodes with a Zn_0.85Mg_0.15O interfacial modification layer.

Sun Y, Jiang Y, Peng H, Wei J, Zhang S, Chen S. Sun Y, et al. Among authors: zhang s. Nanoscale. 2017 Jul 6;9(26):8962-8969. doi: 10.1039/c7nr02099f. Nanoscale. 2017. PMID: 28548170

3

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

Xiao X, Zhang L, Shao Y, Zhou X, He H, Zhang S. Xiao X, et al. Among authors: zhang l, zhang s. ACS Appl Mater Interfaces. 2018 Aug 8;10(31):25850-25857. doi: 10.1021/acsami.7b13211. Epub 2017 Dec 13. ACS Appl Mater Interfaces. 2018. PMID: 29235839

4

Enhanced Detectivity and Suppressed Dark Current of Perovskite-InGaZnO Phototransistor via a PCBM Interlayer.

Xu X, Yan L, Zou T, Qiu R, Liu C, Dai Q, Chen J, Zhang S, Zhou H. Xu X, et al. Among authors: zhang s. ACS Appl Mater Interfaces. 2018 Dec 19;10(50):44144-44151. doi: 10.1021/acsami.8b16346. Epub 2018 Dec 7. ACS Appl Mater Interfaces. 2018. PMID: 30468066

5

A low-temperature-annealed and UV-ozone-enhanced combustion derived nickel oxide hole injection layer for flexible quantum dot light-emitting diodes.

Sun Y , Chen W , Wu Y , He Z , Zhang S , Chen S . Sun Y , et al. Among authors: zhang s. Nanoscale. 2019 Jan 17;11(3):1021-1028. doi: 10.1039/c8nr08976k. Nanoscale. 2019. PMID: 30569931

6

Beyond OLED: Efficient Quantum Dot Light-Emitting Diodes for Display and Lighting Application.

Sun Y, Jiang Y, Sun XW, Zhang S, Chen S. Sun Y, et al. Among authors: zhang s. Chem Rec. 2019 Aug;19(8):1729-1752. doi: 10.1002/tcr.201800191. Epub 2019 Jan 30. Chem Rec. 2019. PMID: 30698895 Review.

7

Investigation on Thermally Induced Efficiency Roll-Off: Toward Efficient and Ultrabright Quantum-Dot Light-Emitting Diodes.

Sun Y, Su Q, Zhang H, Wang F, Zhang S, Chen S. Sun Y, et al. Among authors: zhang s, zhang h. ACS Nano. 2019 Oct 22;13(10):11433-11442. doi: 10.1021/acsnano.9b04879. Epub 2019 Sep 24. ACS Nano. 2019. PMID: 31539472

8

Improved current efficiency of quasi-2D multi-cation perovskite light-emitting diodes: the effect of Cs and K.

Yang G , Liu X , Sun Y , Teng C , Wang Y , Zhang S , Zhou H . Yang G , et al. Among authors: zhang s. Nanoscale. 2020 Jan 23;12(3):1571-1579. doi: 10.1039/c9nr08616a. Nanoscale. 2020. PMID: 31859308

9

Performance Enhancement and Bending Restoration for Flexible Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors by Low-Temperature Supercritical Dehydration Treatment.

Zhang J, Huang W, Chang KC, Shi Y, Zhao C, Wang X, Meng H, Zhang S, Zhang M. Zhang J, et al. Among authors: zhang m, zhang s. ACS Appl Mater Interfaces. 2021 Feb 24;13(7):8584-8594. doi: 10.1021/acsami.0c21611. Epub 2021 Feb 8. ACS Appl Mater Interfaces. 2021. PMID: 33555178

10

Metal Reaction-Induced Bulk-Doping Effect in Forming Conductive Source-Drain Regions of Self-Aligned Top-Gate Amorphous InGaZnO Thin-Film Transistors.

Yang H, Zhou X, Fu H, Chang B, Min Y, Peng H, Lu L, Zhang S. Yang H, et al. Among authors: zhang s. ACS Appl Mater Interfaces. 2021 Mar 10;13(9):11442-11448. doi: 10.1021/acsami.0c21123. Epub 2021 Feb 16. ACS Appl Mater Interfaces. 2021. PMID: 33591715

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