Kenyon AJ - Search Results

1

Silicon Oxide (SiO_x ): A Promising Material for Resistance Switching?

Mehonic A, Shluger AL, Gao D, Valov I, Miranda E, Ielmini D, Bricalli A, Ambrosi E, Li C, Yang JJ, Xia Q, Kenyon AJ. Mehonic A, et al. Among authors: kenyon aj. Adv Mater. 2018 Oct;30(43):e1801187. doi: 10.1002/adma.201801187. Epub 2018 Jun 29. Adv Mater. 2018. PMID: 29957849 Review.

2

Electrically tailored resistance switching in silicon oxide.

Mehonic A, Cueff S, Wojdak M, Hudziak S, Labbé C, Rizk R, Kenyon AJ. Mehonic A, et al. Among authors: kenyon aj. Nanotechnology. 2012 Nov 16;23(45):455201. doi: 10.1088/0957-4484/23/45/455201. Epub 2012 Oct 12. Nanotechnology. 2012. PMID: 23064085

3

Quantum conductance in silicon oxide resistive memory devices.

Mehonic A, Vrajitoarea A, Cueff S, Hudziak S, Howe H, Labbé C, Rizk R, Pepper M, Kenyon AJ. Mehonic A, et al. Among authors: kenyon aj. Sci Rep. 2013;3:2708. doi: 10.1038/srep02708. Sci Rep. 2013. PMID: 24048282 Free PMC article.

4

Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM.

Buckwell M, Montesi L, Hudziak S, Mehonic A, Kenyon AJ. Buckwell M, et al. Among authors: kenyon aj. Nanoscale. 2015 Nov 21;7(43):18030-5. doi: 10.1039/c5nr04982b. Nanoscale. 2015. PMID: 26482563 Free PMC article.

5

Emulating the Electrical Activity of the Neuron Using a Silicon Oxide RRAM Cell.

Mehonic A, Kenyon AJ. Mehonic A, et al. Among authors: kenyon aj. Front Neurosci. 2016 Feb 23;10:57. doi: 10.3389/fnins.2016.00057. eCollection 2016. Front Neurosci. 2016. PMID: 26941598 Free PMC article.

6

Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica.

Mehonic A, Buckwell M, Montesi L, Munde MS, Gao D, Hudziak S, Chater RJ, Fearn S, McPhail D, Bosman M, Shluger AL, Kenyon AJ. Mehonic A, et al. Among authors: kenyon aj. Adv Mater. 2016 Sep;28(34):7486-93. doi: 10.1002/adma.201601208. Epub 2016 Jun 23. Adv Mater. 2016. PMID: 27334656

7

Intrinsic Resistance Switching in Amorphous Silicon Suboxides: The Role of Columnar Microstructure.

Munde MS, Mehonic A, Ng WH, Buckwell M, Montesi L, Bosman M, Shluger AL, Kenyon AJ. Munde MS, et al. Among authors: kenyon aj. Sci Rep. 2017 Aug 24;7(1):9274. doi: 10.1038/s41598-017-09565-8. Sci Rep. 2017. PMID: 28839255 Free PMC article.

8

Investigation of resistance switching in SiO _x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator.

Sadi T, Mehonic A, Montesi L, Buckwell M, Kenyon A, Asenov A. Sadi T, et al. J Phys Condens Matter. 2018 Feb 28;30(8):084005. doi: 10.1088/1361-648X/aaa7c1. J Phys Condens Matter. 2018. PMID: 29334362 Free article.

9

Spike-Timing Dependent Plasticity in Unipolar Silicon Oxide RRAM Devices.

Zarudnyi K, Mehonic A, Montesi L, Buckwell M, Hudziak S, Kenyon AJ. Zarudnyi K, et al. Among authors: kenyon aj. Front Neurosci. 2018 Feb 8;12:57. doi: 10.3389/fnins.2018.00057. eCollection 2018. Front Neurosci. 2018. PMID: 29472837 Free PMC article.

10

The interplay between structure and function in redox-based resistance switching.

Kenyon AJ, Singh Munde M, Ng WH, Buckwell M, Joksas D, Mehonic A. Kenyon AJ, et al. Faraday Discuss. 2019 Feb 18;213(0):151-163. doi: 10.1039/c8fd00118a. Faraday Discuss. 2019. PMID: 30371722

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