Lee MJ - Search Results

1

Reliable Multivalued Conductance States in TaO _x Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis.

Lee MJ, Park GS, Seo DH, Kwon SM, Lee HJ, Kim JS, Jung M, You CY, Lee H, Kim HG, Pang SB, Seo S, Hwang H, Park SK. Lee MJ, et al. Among authors: lee h, lee hj. ACS Appl Mater Interfaces. 2018 Sep 5;10(35):29757-29765. doi: 10.1021/acsami.8b09046. Epub 2018 Aug 2. ACS Appl Mater Interfaces. 2018. PMID: 30033726 Free article.

2

Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory.

Lee MJ, Han S, Jeon SH, Park BH, Kang BS, Ahn SE, Kim KH, Lee CB, Kim CJ, Yoo IK, Seo DH, Li XS, Park JB, Lee JH, Park Y. Lee MJ, et al. Among authors: lee cb, lee jh. Nano Lett. 2009 Apr;9(4):1476-81. doi: 10.1021/nl803387q. Nano Lett. 2009. PMID: 19296606

3

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures.

Lee MJ, Lee CB, Lee D, Lee SR, Chang M, Hur JH, Kim YB, Kim CJ, Seo DH, Seo S, Chung UI, Yoo IK, Kim K. Lee MJ, et al. Among authors: lee d, lee cb, lee sr. Nat Mater. 2011 Jul 10;10(8):625-30. doi: 10.1038/nmat3070. Nat Mater. 2011. PMID: 21743450

4

A simple device unit consisting of all NiO storage and switch elements for multilevel terabit nonvolatile random access memory.

Lee MJ, Ahn SE, Lee CB, Kim CJ, Jeon S, Chung UI, Yoo IK, Park GS, Han S, Hwang IR, Park BH. Lee MJ, et al. Among authors: lee cb. ACS Appl Mater Interfaces. 2011 Nov;3(11):4475-9. doi: 10.1021/am201163n. Epub 2011 Oct 25. ACS Appl Mater Interfaces. 2011. PMID: 21988144

5

In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structure.

Park GS, Kim YB, Park SY, Li XS, Heo S, Lee MJ, Chang M, Kwon JH, Kim M, Chung UI, Dittmann R, Waser R, Kim K. Park GS, et al. Among authors: lee mj. Nat Commun. 2013;4:2382. doi: 10.1038/ncomms3382. Nat Commun. 2013. PMID: 24008898 Free article.

6

A plasma-treated chalcogenide switch device for stackable scalable 3D nanoscale memory.

Lee MJ, Lee D, Cho SH, Hur JH, Lee SM, Seo DH, Kim DS, Yang MS, Lee S, Hwang E, Uddin MR, Kim H, Chung UI, Park Y, Yoo IK. Lee MJ, et al. Among authors: lee d, lee sm, lee s. Nat Commun. 2013;4:2629. doi: 10.1038/ncomms3629. Nat Commun. 2013. PMID: 24129660 Free article.

7

Impact of transient currents caused by alternating drain stress in oxide semiconductors.

Lee HJ, Cho SH, Abe K, Lee MJ, Jung M. Lee HJ, et al. Among authors: lee mj. Sci Rep. 2017 Aug 29;7(1):9782. doi: 10.1038/s41598-017-10285-2. Sci Rep. 2017. PMID: 28852104 Free PMC article.

8

Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor.

Lee HJ, Abe K, Kim JS, Lee MJ. Lee HJ, et al. Among authors: lee mj. Sci Rep. 2017 Dec 21;7(1):17963. doi: 10.1038/s41598-017-18420-9. Sci Rep. 2017. PMID: 29269745 Free PMC article.

9

High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes.

Kwon SM, Won JK, Jo JW, Kim J, Kim HJ, Kwon HI, Kim J, Ahn S, Kim YH, Lee MJ, Lee HI, Marks TJ, Kim MG, Park SK. Kwon SM, et al. Among authors: lee mj, lee hi. Sci Adv. 2018 Apr 13;4(4):eaap9104. doi: 10.1126/sciadv.aap9104. eCollection 2018 Apr. Sci Adv. 2018. PMID: 29662951 Free PMC article.

10

Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor.

Lee HJ, Abe K, Noh HY, Kim JS, Lee H, Lee MJ. Lee HJ, et al. Among authors: lee h, lee mj. Sci Rep. 2019 Aug 19;9(1):11977. doi: 10.1038/s41598-019-48552-z. Sci Rep. 2019. PMID: 31427668 Free PMC article.

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