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Page 1
Structural Changes in a Single GaN Nanowire under Applied Voltage Bias.
Lazarev S, Dzhigaev D, Bi Z, Nowzari A, Kim YY, Rose M, Zaluzhnyy IA, Gorobtsov OY, Zozulya AV, Lenrick F, Gustafsson A, Mikkelsen A, Sprung M, Samuelson L, Vartanyants IA. Lazarev S, et al. Among authors: mikkelsen a. Nano Lett. 2018 Sep 12;18(9):5446-5452. doi: 10.1021/acs.nanolett.8b01802. Epub 2018 Jul 26. Nano Lett. 2018. PMID: 30033733
Au-free epitaxial growth of InAs nanowires.
Mandl B, Stangl J, Mårtensson T, Mikkelsen A, Eriksson J, Karlsson LS, Bauer GU, Samuelson L, Seifert W. Mandl B, et al. Among authors: mikkelsen a. Nano Lett. 2006 Aug;6(8):1817-21. doi: 10.1021/nl060452v. Nano Lett. 2006. PMID: 16895379
Direct atomic scale imaging of III-V nanowire surfaces.
Hilner E, Håkanson U, Fröberg LE, Karlsson M, Kratzer P, Lundgren E, Samuelson L, Mikkelsen A. Hilner E, et al. Among authors: mikkelsen a. Nano Lett. 2008 Nov;8(11):3978-82. doi: 10.1021/nl802500d. Epub 2008 Oct 14. Nano Lett. 2008. PMID: 18850752
Growth mechanism of self-catalyzed group III-V nanowires.
Mandl B, Stangl J, Hilner E, Zakharov AA, Hillerich K, Dey AW, Samuelson L, Bauer G, Deppert K, Mikkelsen A. Mandl B, et al. Among authors: mikkelsen a. Nano Lett. 2010 Nov 10;10(11):4443-9. doi: 10.1021/nl1022699. Nano Lett. 2010. PMID: 20939507 Free PMC article.
305 results