Chang YF - Search Results

1

Dual Functions of V/SiO_x/AlO_y/p⁺⁺Si Device as Selector and Memory.

Kim S, Lin CY, Kim MH, Kim TH, Kim H, Chen YC, Chang YF, Park BG. Kim S, et al. Among authors: chang yf. Nanoscale Res Lett. 2018 Aug 23;13(1):252. doi: 10.1186/s11671-018-2660-9. Nanoscale Res Lett. 2018. PMID: 30141145 Free PMC article.

2

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

Ji L, Chang YF, Fowler B, Chen YC, Tsai TM, Chang KC, Chen MC, Chang TC, Sze SM, Yu ET, Lee JC. Ji L, et al. Among authors: chang tc, chang yf, chang kc. Nano Lett. 2014 Feb 12;14(2):813-8. doi: 10.1021/nl404160u. Epub 2013 Dec 30. Nano Lett. 2014. PMID: 24369783

3

Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM. Chang KC, et al. Among authors: chang tc, chang yf. Nanoscale Res Lett. 2015 Mar 12;10:120. doi: 10.1186/s11671-015-0740-7. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25873842 Free PMC article.

4

"Cut-and-Paste" Manufacture of Multiparametric Epidermal Sensor Systems.

Yang S, Chen YC, Nicolini L, Pasupathy P, Sacks J, Su B, Yang R, Sanchez D, Chang YF, Wang P, Schnyer D, Neikirk D, Lu N. Yang S, et al. Among authors: chang yf. Adv Mater. 2015 Nov 4;27(41):6423-30. doi: 10.1002/adma.201502386. Epub 2015 Sep 23. Adv Mater. 2015. PMID: 26398335

5

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layer.

Zhou F, Chang YF, Chen YC, Wu X, Zhang Y, Fowler B, Lee JC. Zhou F, et al. Among authors: chang yf. Phys Chem Chem Phys. 2016 Jan 14;18(2):700-3. doi: 10.1039/c5cp06507k. Phys Chem Chem Phys. 2016. PMID: 26659556

6

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide.

Chang YF, Fowler B, Chen YC, Zhou F, Pan CH, Chang TC, Lee JC. Chang YF, et al. Among authors: chang tc. Sci Rep. 2016 Feb 16;6:21268. doi: 10.1038/srep21268. Sci Rep. 2016. PMID: 26880381 Free PMC article.

7

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode.

Lin CY, Chen PH, Chang TC, Chang KC, Zhang SD, Tsai TM, Pan CH, Chen MC, Su YT, Tseng YT, Chang YF, Chen YC, Huang HC, Sze SM. Lin CY, et al. Among authors: chang tc, chang yf, chang kc. Nanoscale. 2017 Jun 29;9(25):8586-8590. doi: 10.1039/c7nr02305g. Nanoscale. 2017. PMID: 28636031

8

Ultralow power switching in a silicon-rich SiN_y/SiN_x double-layer resistive memory device.

Kim S, Chang YF, Kim MH, Bang S, Kim TH, Chen YC, Lee JH, Park BG. Kim S, et al. Among authors: chang yf. Phys Chem Chem Phys. 2017 Jul 26;19(29):18988-18995. doi: 10.1039/c7cp03120c. Phys Chem Chem Phys. 2017. PMID: 28702540

9

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory.

Kim S, Chang YF, Kim MH, Kim TH, Kim Y, Park BG. Kim S, et al. Among authors: chang yf. Materials (Basel). 2017 Apr 26;10(5):459. doi: 10.3390/ma10050459. Materials (Basel). 2017. PMID: 28772819 Free PMC article.

10

Analog Synaptic Behavior of a Silicon Nitride Memristor.

Kim S, Kim H, Hwang S, Kim MH, Chang YF, Park BG. Kim S, et al. Among authors: chang yf. ACS Appl Mater Interfaces. 2017 Nov 22;9(46):40420-40427. doi: 10.1021/acsami.7b11191. Epub 2017 Nov 8. ACS Appl Mater Interfaces. 2017. PMID: 29086551

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