Lin CY - Search Results

1

Dual Functions of V/SiO_x/AlO_y/p⁺⁺Si Device as Selector and Memory.

Kim S, Lin CY, Kim MH, Kim TH, Kim H, Chen YC, Chang YF, Park BG. Kim S, et al. Among authors: lin cy. Nanoscale Res Lett. 2018 Aug 23;13(1):252. doi: 10.1186/s11671-018-2660-9. Nanoscale Res Lett. 2018. PMID: 30141145 Free PMC article.

2

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode.

Lin CY, Chen PH, Chang TC, Chang KC, Zhang SD, Tsai TM, Pan CH, Chen MC, Su YT, Tseng YT, Chang YF, Chen YC, Huang HC, Sze SM. Lin CY, et al. Nanoscale. 2017 Jun 29;9(25):8586-8590. doi: 10.1039/c7nr02305g. Nanoscale. 2017. PMID: 28636031

3

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications.

Chen YC , Hu ST , Lin CY , Fowler B , Huang HC , Lin CC , Kim S , Chang YF , Lee JC . Chen YC , et al. Among authors: lin cy, lin cc. Nanoscale. 2018 Aug 23;10(33):15608-15614. doi: 10.1039/c8nr04766a. Nanoscale. 2018. PMID: 30090909

4

A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM application.

Chen YC, Lin CC, Hu ST, Lin CY, Fowler B, Lee J. Chen YC, et al. Among authors: lin cy, lin cc. Sci Rep. 2019 Aug 27;9(1):12420. doi: 10.1038/s41598-019-48932-5. Sci Rep. 2019. PMID: 31455881 Free PMC article.

5

Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution.

Lin CY , Zhou KJ , Chang TC , Sun LC , Tan YF , Wu CW , Yeh YH , Chen WC , Lin CC , Huang WC , Wu CH , Lin SK , Lin TH , Huang JW , Sze SM . Lin CY , et al. Among authors: lin sk, lin th, lin cc. Nanoscale. 2020 Dec 8;12(46):23532-23536. doi: 10.1039/d0nr04225k. Nanoscale. 2020. PMID: 33237060

6

Investigating Selectorless Property within Niobium Devices for Storage Applications.

Chen PH, Lin CY, Chang TC, Eshraghian JK, Chao YT, Lu WD, Sze SM. Chen PH, et al. Among authors: lin cy. ACS Appl Mater Interfaces. 2022 Jan 12;14(1):2343-2350. doi: 10.1021/acsami.1c20460. Epub 2022 Jan 3. ACS Appl Mater Interfaces. 2022. PMID: 34978410

7

Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.

Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM. Chen PH, et al. Among authors: lin cy. ACS Appl Mater Interfaces. 2017 Jan 25;9(3):3149-3155. doi: 10.1021/acsami.6b14282. Epub 2017 Jan 10. ACS Appl Mater Interfaces. 2017. PMID: 28072511

8

Adaptive Synaptic Memory via Lithium Ion Modulation in RRAM Devices.

Lin CY, Chen J, Chen PH, Chang TC, Wu Y, Eshraghian JK, Moon J, Yoo S, Wang YH, Chen WC, Wang ZY, Huang HC, Li Y, Miao X, Lu WD, Sze SM. Lin CY, et al. Small. 2020 Oct;16(42):e2003964. doi: 10.1002/smll.202003964. Epub 2020 Sep 29. Small. 2020. PMID: 32996256

9

Enhancing LiAlO_X synaptic performance by reducing the Schottky barrier height for deep neural network applications.

Fu Y , Dong B , Su WC , Lin CY , Zhou KJ , Chang TC , Zhuge F , Li Y , He Y , Gao B , Miao XS . Fu Y , et al. Among authors: lin cy. Nanoscale. 2020 Nov 26;12(45):22970-22977. doi: 10.1039/d0nr04782a. Nanoscale. 2020. PMID: 33034326

10

Positive Correlation Between Serum Limonene Levels and Muscle Health in a Representative Adult Population in the United States.

Wu CC, Fang YW, Wang C, Lin CY. Wu CC, et al. Among authors: lin cy. Pharmaceuticals (Basel). 2025 Jan 10;18(1):74. doi: 10.3390/ph18010074. Pharmaceuticals (Basel). 2025. PMID: 39861137

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