Yang H - Search Results

1

Quantum dot vertical-cavity surface-emitting lasers covering the 'green gap'.

Mei Y, Weng GE, Zhang BP, Liu JP, Hofmann W, Ying LY, Zhang JY, Li ZC, Yang H, Kuo HC. Mei Y, et al. Among authors: yang h. Light Sci Appl. 2017 Jan 27;6(1):e16199. doi: 10.1038/lsa.2016.199. eCollection 2017 Jan. Light Sci Appl. 2017. PMID: 30167197 Free PMC article.

2

High-efficiency InGaN-based LEDs grown on patterned sapphire substrates.

Huang XH, Liu JP, Kong JJ, Yang H, Wang HB. Huang XH, et al. Among authors: yang h. Opt Express. 2011 Jul 4;19 Suppl 4:A949-55. doi: 10.1364/OE.19.00A949. Opt Express. 2011. PMID: 21747566 Free article.

3

Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers.

Weng G, Mei Y, Liu J, Hofmann W, Ying L, Zhang J, Bu Y, Li Z, Yang H, Zhang B. Weng G, et al. Among authors: yang h. Opt Express. 2016 Jul 11;24(14):15546-53. doi: 10.1364/OE.24.015546. Opt Express. 2016. PMID: 27410828 Free article.

4

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

Zhang F, Ikeda M, Zhang SM, Liu JP, Tian AQ, Wen PY, Cheng Y, Yang H. Zhang F, et al. Among authors: yang h. Nanoscale Res Lett. 2016 Dec;11(1):519. doi: 10.1186/s11671-016-1732-y. Epub 2016 Nov 25. Nanoscale Res Lett. 2016. PMID: 27885621 Free PMC article.

5

Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region.

Tian A, Liu J, Zhang L, Li Z, Ikeda M, Zhang S, Li D, Wen P, Zhang F, Cheng Y, Fan X, Yang H. Tian A, et al. Among authors: yang h. Opt Express. 2017 Jan 9;25(1):415-421. doi: 10.1364/OE.25.000415. Opt Express. 2017. PMID: 28085835 Free article.

6

A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing.

Feng MX, Sun Q, Liu JP, Li ZC, Zhou Y, Zhang SM, Yang H. Feng MX, et al. Among authors: yang h. Materials (Basel). 2017 Apr 30;10(5):482. doi: 10.3390/ma10050482. Materials (Basel). 2017. PMID: 28772842 Free PMC article.

7

Picosecond tunable gain-switched blue pulses from GaN laser diodes with nanosecond current injections.

Chen S, Nakamura T, Ito T, Bao X, Nakamae H, Weng G, Hu X, Yoshita M, Akiyama H, Liu J, Ikeda M, Yang H. Chen S, et al. Among authors: yang h. Opt Express. 2017 Jun 12;25(12):13046-13054. doi: 10.1364/OE.25.013046. Opt Express. 2017. PMID: 28788844 Free article.

8

Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si.

Sun Y, Zhou K, Feng M, Li Z, Zhou Y, Sun Q, Liu J, Zhang L, Li D, Sun X, Li D, Zhang S, Ikeda M, Yang H. Sun Y, et al. Among authors: yang h. Light Sci Appl. 2018 Jun 13;7:13. doi: 10.1038/s41377-018-0008-y. eCollection 2018. Light Sci Appl. 2018. PMID: 30839586 Free PMC article.

9

Effect of Graded-Indium-Content Superlattice on the Optical and Structural Properties of Yellow-Emitting InGaN/GaN Quantum Wells.

Li X, Liu J, Su X, Huang S, Tian A, Zhou W, Jiang L, Ikeda M, Yang H. Li X, et al. Among authors: yang h. Materials (Basel). 2021 Apr 9;14(8):1877. doi: 10.3390/ma14081877. Materials (Basel). 2021. PMID: 33918874 Free PMC article.

10

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate.

Wu P, Liu J, Jiang L, Hu L, Ren X, Tian A, Zhou W, Ikeda M, Yang H. Wu P, et al. Among authors: yang h. Nanomaterials (Basel). 2022 Jan 29;12(3):478. doi: 10.3390/nano12030478. Nanomaterials (Basel). 2022. PMID: 35159822 Free PMC article.

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