Chen P - Search Results

1

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, Li M, Zhang Y, Du G. Liang F, et al. Among authors: chen p. Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744. Nanomaterials (Basel). 2018. PMID: 30235861 Free PMC article.

2

Suppression of electron leakage by inserting a thin undoped InGaN layer prior to electron blocking layer in InGaN-based blue-violet laser diodes.

Le LC, Zhao DG, Jiang DS, Chen P, Liu ZS, Yang J, He XG, Li XJ, Liu JP, Zhu JJ, Zhang SM, Yang H. Le LC, et al. Among authors: chen p. Opt Express. 2014 May 19;22(10):11392-8. doi: 10.1364/OE.22.011392. Opt Express. 2014. PMID: 24921260 Free article.

3

Temperature dependence of photoluminescence spectra for green light emission from InGaN/GaN multiple wells.

Liu W, Zhao DG, Jiang DS, Chen P, Liu ZS, Zhu JJ, Shi M, Zhao DM, Li X, Liu JP, Zhang SM, Wang H, Yang H, Zhang YT, Du GT. Liu W, et al. Among authors: chen p. Opt Express. 2015 Jun 15;23(12):15935-43. doi: 10.1364/OE.23.015935. Opt Express. 2015. PMID: 26193570 Free article.

4

Differential resistance of GaN-based laser diodes with and without polarization effect.

Li X, Liu ZS, Zhao DG, Jiang DS, Chen P, Zhu JJ, Yang J, Le LC, Liu W, He XG, Li XJ, Liang F, Zhang LQ, Liu JQ, Yang H. Li X, et al. Among authors: chen p. Appl Opt. 2015 Oct 10;54(29):8706-11. doi: 10.1364/AO.54.008706. Appl Opt. 2015. PMID: 26479807

5

Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes.

Yang J, Zhao DG, Jiang DS, Chen P, Liu ZS, Zhu JJ, Li XJ, He XG, Liu JP, Zhang LQ, Yang H, Zhang YT, Du GT. Yang J, et al. Among authors: chen p. Opt Express. 2016 Jun 27;24(13):13824-31. doi: 10.1364/OE.24.013824. Opt Express. 2016. PMID: 27410545 Free article.

6

Tunable reflecting terahertz filter based on chirped metamaterial structure.

Yang J, Gong C, Sun L, Chen P, Lin L, Liu W. Yang J, et al. Among authors: chen p. Sci Rep. 2016 Dec 12;6:38732. doi: 10.1038/srep38732. Sci Rep. 2016. PMID: 27941833 Free PMC article.

7

Investigation on the corrosive effect of NH₃ during InGaN/GaN multi-quantum well growth in light emitting diodes.

Yang J, Zhao DG, Jiang DS, Chen P, Zhu JJ, Liu ZS, Liu W, Li X, Liang F, Liu ST, Zhang LQ, Yang H. Yang J, et al. Among authors: chen p. Sci Rep. 2017 Mar 21;7:44850. doi: 10.1038/srep44850. Sci Rep. 2017. PMID: 28322286 Free PMC article.

8

Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold.

Li X, Liu ZS, Zhao DG, Jiang DS, Chen P, Zhu JJ, Yang J, Liu W, He XG, Li XJ, Liang F, Liu ST, Xing Y, Zhang LQ, Li M, Zhang J. Li X, et al. Among authors: chen p. Appl Opt. 2017 Mar 20;56(9):2462-2466. doi: 10.1364/AO.56.002462. Appl Opt. 2017. PMID: 28375352

9

Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region.

Yang J, Zhao DG, Jiang DS, Li X, Liang F, Chen P, Zhu JJ, Liu ZS, Liu ST, Zhang LQ, Li M. Yang J, et al. Among authors: chen p. Opt Express. 2017 May 1;25(9):9595-9602. doi: 10.1364/OE.25.009595. Opt Express. 2017. PMID: 28468342 Free article.

10

Influence of residual carbon impurities in a heavily Mg-doped GaN contact layer on an Ohmic contact.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu W, Li X, Liu S, Xing Y, Zhang L, Li M, Zhang J. Liang F, et al. Among authors: chen p. Appl Opt. 2017 May 10;56(14):4197-4200. doi: 10.1364/AO.56.004197. Appl Opt. 2017. PMID: 29047555

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