Yang J - Search Results

1

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, Li M, Zhang Y, Du G. Liang F, et al. Among authors: yang j. Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744. Nanomaterials (Basel). 2018. PMID: 30235861 Free PMC article.

2

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells.

Ben Y, Liang F, Zhao D, Wang X, Yang J, Liu Z, Chen P. Ben Y, et al. Among authors: yang j. Nanomaterials (Basel). 2021 Apr 16;11(4):1023. doi: 10.3390/nano11041023. Nanomaterials (Basel). 2021. PMID: 33923643 Free PMC article.

3

Improving Output Efficiency of InGaN-Based MQW Green Laser Diodes by Modulating Indium Content of Quantum Barriers and Using Composite Lower Waveguide Layers.

Chen Z, Liang F, Zhao D, Yang J, Chen P, Jiang D. Chen Z, et al. Among authors: yang j. Nanomaterials (Basel). 2022 Jul 27;12(15):2581. doi: 10.3390/nano12152581. Nanomaterials (Basel). 2022. PMID: 35957010 Free PMC article.

4

Effect of Hydrogen Treatment on Photoluminescence and Morphology of InGaN Multiple Quantum Wells.

Wang Y, Liang F, Zhao D, Ben Y, Yang J, Liu Z, Chen P. Wang Y, et al. Among authors: yang j. Nanomaterials (Basel). 2022 Sep 8;12(18):3114. doi: 10.3390/nano12183114. Nanomaterials (Basel). 2022. PMID: 36144901 Free PMC article.

5

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors.

Huang Y, Yang J, Zhao D, Zhang Y, Liu Z, Liang F, Chen P. Huang Y, et al. Among authors: yang j. Nanomaterials (Basel). 2022 Sep 11;12(18):3148. doi: 10.3390/nano12183148. Nanomaterials (Basel). 2022. PMID: 36144936 Free PMC article.

6

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L. Liang F, et al. Among authors: yang j. Nanomaterials (Basel). 2018 Dec 10;8(12):1026. doi: 10.3390/nano8121026. Nanomaterials (Basel). 2018. PMID: 30544659 Free PMC article.

7

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN.

Zhang Y, Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Yang J, Liu S. Zhang Y, et al. Among authors: yang j. Nanoscale Res Lett. 2020 Feb 10;15(1):38. doi: 10.1186/s11671-020-3263-9. Nanoscale Res Lett. 2020. PMID: 32040646 Free PMC article.

8

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness.

Wang X, Liang F, Zhao D, Liu Z, Zhu J, Yang J. Wang X, et al. Among authors: yang j. Nanoscale Res Lett. 2020 Oct 1;15(1):191. doi: 10.1186/s11671-020-03420-y. Nanoscale Res Lett. 2020. PMID: 33001341 Free PMC article.

9

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H₂/NH₃ Mixed Gas for Improving Structural and Optical Properties.

Ben Y, Liang F, Zhao D, Yang J, Liu Z, Chen P. Ben Y, et al. Among authors: yang j. Nanoscale Res Lett. 2021 Nov 2;16(1):161. doi: 10.1186/s11671-021-03618-8. Nanoscale Res Lett. 2021. PMID: 34727236 Free PMC article.

10

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.

Xing Y, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liang F, Liu S, Zhang L. Xing Y, et al. Among authors: yang j. Nanoscale Res Lett. 2019 Mar 12;14(1):88. doi: 10.1186/s11671-019-2919-9. Nanoscale Res Lett. 2019. PMID: 30874975 Free PMC article.

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