Zhang Y - Search Results

1

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN.

Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L, Li M, Zhang Y, Du G. Liang F, et al. Among authors: zhang l, zhang y. Nanomaterials (Basel). 2018 Sep 19;8(9):744. doi: 10.3390/nano8090744. Nanomaterials (Basel). 2018. PMID: 30235861 Free PMC article.

2

Electrically driven ultraviolet random lasing from an n-MgZnO/i-ZnO/SiO2/p-Si asymmetric double heterojunction.

Shi ZF, Zhang YT, Xia XC, Zhao W, Wang H, Zhao L, Dong X, Zhang BL, Du GT. Shi ZF, et al. Nanoscale. 2013 Jun 7;5(11):5080-5. doi: 10.1039/c3nr33445g. Epub 2013 May 2. Nanoscale. 2013. PMID: 23640662

3

High-temperature continuous-wave laser realized in hollow microcavities.

Shi Z, Zhang Y, Cui X, Zhuang S, Wu B, Dong X, Zhang B, Du G. Shi Z, et al. Among authors: zhang b, zhang y. Sci Rep. 2014 Nov 24;4:7180. doi: 10.1038/srep07180. Sci Rep. 2014. PMID: 25417966 Free PMC article.

4

Photoluminescence performance enhancement of ZnO/MgO heterostructured nanowires and their applications in ultraviolet laser diodes.

Shi ZF, Zhang YT, Cui XJ, Zhuang SW, Wu B, Chu XW, Dong X, Zhang BL, Du GT. Shi ZF, et al. Phys Chem Chem Phys. 2015 Jun 7;17(21):13813-20. doi: 10.1039/c5cp00674k. Epub 2015 Mar 24. Phys Chem Chem Phys. 2015. PMID: 25803480

5

The growth of ZnO on stainless steel foils by MOCVD and its application in light emitting devices.

Wu B, Zhuang SW, Chi C, Shi ZF, Jiang JY, Dong X, Li WC, Zhang YT, Zhang BL, Du GT. Wu B, et al. Phys Chem Chem Phys. 2016 Feb 21;18(7):5614-21. doi: 10.1039/c5cp06826f. Epub 2016 Feb 1. Phys Chem Chem Phys. 2016. PMID: 26862710

6

Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires.

Shi ZF, Xu TT, Wu D, Zhang YT, Zhang BL, Tian YT, Li XJ, Du GT. Shi ZF, et al. Nanoscale. 2016 May 21;8(19):9997-10003. doi: 10.1039/c5nr07236k. Epub 2016 May 4. Nanoscale. 2016. PMID: 27142941

7

High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure.

Shi Z, Li Y, Zhang Y, Chen Y, Li X, Wu D, Xu T, Shan C, Du G. Shi Z, et al. Among authors: zhang y. Nano Lett. 2017 Jan 11;17(1):313-321. doi: 10.1021/acs.nanolett.6b04116. Epub 2016 Dec 14. Nano Lett. 2017. PMID: 27958756

8

Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes.

Shi Z, Li S, Li Y, Ji H, Li X, Wu D, Xu T, Chen Y, Tian Y, Zhang Y, Shan C, Du G. Shi Z, et al. Among authors: zhang y. ACS Nano. 2018 Feb 27;12(2):1462-1472. doi: 10.1021/acsnano.7b07856. Epub 2018 Jan 16. ACS Nano. 2018. PMID: 29323874

9

Effect of carrier transfer process between two kinds of localized potential traps on the spectral properties of InGaN/GaN multiple quantum wells.

Liu W, Zhao D, Jiang D, Shi D, Zhu J, Liu Z, Chen P, Yang J, Liang F, Liu S, Xing Y, Zhang L, Wang W, Li M, Zhang Y, Du G. Liu W, et al. Among authors: zhang l, zhang y. Opt Express. 2018 Feb 5;26(3):3427-3434. doi: 10.1364/OE.26.003427. Opt Express. 2018. PMID: 29401870 Free article.

10

Anomalous electroluminescent blue-shift behavior induced by well widths variance and localization effect in InGaN/GaN multi-quantum wells.

Peng L, Zhao D, Jiang D, Zhu J, Liu Z, Chen P, Yang J, Liu W, Liang F, Xing Y, Liu S, Zhang L, Wang W, Li M, Zhang Y, Du G. Peng L, et al. Among authors: zhang l, zhang y. Opt Express. 2018 Aug 20;26(17):21736-21744. doi: 10.1364/OE.26.021736. Opt Express. 2018. PMID: 30130875 Free article.

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