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Unveiling the double-well energy landscape in a ferroelectric layer.
Hoffmann M, Fengler FPG, Herzig M, Mittmann T, Max B, Schroeder U, Negrea R, Lucian P, Slesazeck S, Mikolajick T. Hoffmann M, et al. Among authors: fengler fpg. Nature. 2019 Jan;565(7740):464-467. doi: 10.1038/s41586-018-0854-z. Epub 2019 Jan 14. Nature. 2019. PMID: 30643206
Lanthanum-Doped Hafnium Oxide: A Robust Ferroelectric Material.
Schroeder U, Richter C, Park MH, Schenk T, Pešić M, Hoffmann M, Fengler FPG, Pohl D, Rellinghaus B, Zhou C, Chung CC, Jones JL, Mikolajick T. Schroeder U, et al. Among authors: fengler fpg. Inorg Chem. 2018 Mar 5;57(5):2752-2765. doi: 10.1021/acs.inorgchem.7b03149. Epub 2018 Feb 15. Inorg Chem. 2018. PMID: 29446630
Effect of Zr Content on the Wake-Up Effect in Hf1-xZrxO2 Films.
Park MH, Kim HJ, Kim YJ, Lee YH, Moon T, Kim KD, Hyun SD, Fengler F, Schroeder U, Hwang CS. Park MH, et al. ACS Appl Mater Interfaces. 2016 Jun 22;8(24):15466-75. doi: 10.1021/acsami.6b03586. Epub 2016 Jun 9. ACS Appl Mater Interfaces. 2016. PMID: 27237137