Park W - Search Results

1

Facile fabrication of ZnO nanowire memory device based on chemically-treated surface defects.

Park W, Kim TH, Nam JH, Jang HY, Pak Y, Min JW, Yun J, Cho B. Park W, et al. Nanotechnology. 2019 Apr 12;30(15):155201. doi: 10.1088/1361-6528/aaff74. Epub 2019 Jan 17. Nanotechnology. 2019. PMID: 30654335

2

Tuning of operation mode of ZnO nanowire field effect transistors by solvent-driven surface treatment.

Park W, Hong WK, Jo G, Wang G, Choe M, Maeng J, Kahng YH, Lee T. Park W, et al. Nanotechnology. 2009 Nov 25;20(47):475702. doi: 10.1088/0957-4484/20/47/475702. Epub 2009 Oct 26. Nanotechnology. 2009. PMID: 19858553

3

Enhancement in the photodetection of ZnO nanowires by introducing surface-roughness-induced traps.

Park W, Jo G, Hong WK, Yoon J, Choe M, Lee S, Ji Y, Kim G, Kahng YH, Lee K, Wang D, Lee T. Park W, et al. Nanotechnology. 2011 May 20;22(20):205204. doi: 10.1088/0957-4484/22/20/205204. Epub 2011 Mar 28. Nanotechnology. 2011. PMID: 21444951

4

Large-area fabrication of periodic sub-15 nm-width single-layer graphene nanorings.

Pak Y, Jeong H, Lee KH, Song H, Kwon T, Park J, Park W, Jeong MS, Lee T, Seo S, Jung GY. Pak Y, et al. Among authors: park w, park j. Adv Mater. 2013 Jan 11;25(2):199-204. doi: 10.1002/adma.201202626. Epub 2012 Oct 29. Adv Mater. 2013. PMID: 23108801

5

Investigation of threshold voltage instability induced by gate bias stress in ZnO nanowire field effect transistors.

Choe M, Park W, Kang JW, Jeong S, Hong WK, Lee BH, Park SJ, Lee T. Choe M, et al. Among authors: park w, park sj. Nanotechnology. 2012 Dec 7;23(48):485201. doi: 10.1088/0957-4484/23/48/485201. Epub 2012 Nov 6. Nanotechnology. 2012. PMID: 23128783

6

Enhanced Performance of MoS₂ Photodetectors by Inserting an ALD-Processed TiO₂ Interlayer.

Pak Y, Park W, Mitra S, Sasikala Devi AA, Loganathan K, Kumaresan Y, Kim Y, Cho B, Jung GY, Hussain MM, Roqan IS. Pak Y, et al. Among authors: park w. Small. 2018 Feb;14(5). doi: 10.1002/smll.201703176. Epub 2017 Dec 4. Small. 2018. PMID: 29205838

7

Contact resistance reduction of ZnO thin film transistors (TFTs) with saw-shaped electrode.

Park W, Shaikh SF, Min JW, Lee SK, Lee BH, Hussain MM. Park W, et al. Nanotechnology. 2018 Aug 10;29(32):325202. doi: 10.1088/1361-6528/aac4b9. Epub 2018 May 15. Nanotechnology. 2018. PMID: 29761790

8

Improvement of the Bias Stress Stability in 2D MoS₂ and WS₂ Transistors with a TiO₂ Interfacial Layer.

Park W, Pak Y, Jang HY, Nam JH, Kim TH, Oh S, Choi SM, Kim Y, Cho B. Park W, et al. Nanomaterials (Basel). 2019 Aug 12;9(8):1155. doi: 10.3390/nano9081155. Nanomaterials (Basel). 2019. PMID: 31409001 Free PMC article.

9

Artificial 2D van der Waals Synapse Devices via Interfacial Engineering for Neuromorphic Systems.

Park W, Jang HY, Nam JH, Kwon JD, Cho B, Kim Y. Park W, et al. Nanomaterials (Basel). 2020 Jan 2;10(1):88. doi: 10.3390/nano10010088. Nanomaterials (Basel). 2020. PMID: 31906481 Free PMC article.

10

One-step H₂S reactive sputtering for 2D MoS₂/Si heterojunction photodetector.

Jang HY, Nam JH, Yoon J, Kim Y, Park W, Cho B. Jang HY, et al. Among authors: park w. Nanotechnology. 2020 May 29;31(22):225205. doi: 10.1088/1361-6528/ab7606. Epub 2020 Feb 13. Nanotechnology. 2020. PMID: 32053801

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