Wallentin J - Search Results

1

Nanoscale mapping of carrier collection in single nanowire solar cells using X-ray beam induced current.

Chayanun L, Otnes G, Troian A, Hammarberg S, Salomon D, Borgström MT, Wallentin J. Chayanun L, et al. Among authors: wallentin j. J Synchrotron Radiat. 2019 Jan 1;26(Pt 1):102-108. doi: 10.1107/S1600577518015229. Epub 2019 Jan 1. J Synchrotron Radiat. 2019. PMID: 30655474 Free PMC article.

2

High-performance single nanowire tunnel diodes.

Wallentin J, Persson JM, Wagner JB, Samuelson L, Deppert K, Borgström MT. Wallentin J, et al. Nano Lett. 2010 Mar 10;10(3):974-9. doi: 10.1021/nl903941b. Nano Lett. 2010. PMID: 20163125

3

Changes in contact angle of seed particle correlated with increased zincblende formation in doped InP nanowires.

Wallentin J, Ek M, Wallenberg LR, Samuelson L, Deppert K, Borgström MT. Wallentin J, et al. Nano Lett. 2010 Dec 8;10(12):4807-12. doi: 10.1021/nl101747z. Epub 2010 Nov 2. Nano Lett. 2010. PMID: 21043510

4

Gate-induced fermi level tuning in InP nanowires at efficiency close to the thermal limit.

Storm K, Nylund G, Borgström M, Wallentin J, Fasth C, Thelander C, Samuelson L. Storm K, et al. Among authors: wallentin j. Nano Lett. 2011 Mar 9;11(3):1127-30. doi: 10.1021/nl104032s. Epub 2011 Feb 9. Nano Lett. 2011. PMID: 21306112

5

Probing the wurtzite conduction band structure using state filling in highly doped InP nanowires.

Wallentin J, Mergenthaler K, Ek M, Wallenberg LR, Samuelson L, Deppert K, Pistol ME, Borgström MT. Wallentin J, et al. Nano Lett. 2011 Jun 8;11(6):2286-90. doi: 10.1021/nl200492g. Epub 2011 May 23. Nano Lett. 2011. PMID: 21604708

6

A new route toward semiconductor nanospintronics: highly Mn-doped GaAs nanowires realized by ion-implantation under dynamic annealing conditions.

Borschel C, Messing ME, Borgström MT, Paschoal W, Wallentin J, Kumar S, Mergenthaler K, Deppert K, Canali CM, Pettersson H, Samuelson L, Ronning C. Borschel C, et al. Among authors: wallentin j. Nano Lett. 2011 Sep 14;11(9):3935-40. doi: 10.1021/nl2021653. Epub 2011 Aug 22. Nano Lett. 2011. PMID: 21848314

7

Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction.

Kriegner D, Wintersberger E, Kawaguchi K, Wallentin J, Borgström MT, Stangl J. Kriegner D, et al. Among authors: wallentin j. Nanotechnology. 2011 Oct 21;22(42):425704. doi: 10.1088/0957-4484/22/42/425704. Epub 2011 Sep 22. Nanotechnology. 2011. PMID: 21937785

8

Electron trapping in InP nanowire FETs with stacking faults.

Wallentin J, Ek M, Wallenberg LR, Samuelson L, Borgström MT. Wallentin J, et al. Nano Lett. 2012 Jan 11;12(1):151-5. doi: 10.1021/nl203213d. Epub 2011 Dec 7. Nano Lett. 2012. PMID: 22149329

9

Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.

Ganjipour B, Wallentin J, Borgström MT, Samuelson L, Thelander C. Ganjipour B, et al. Among authors: wallentin j. ACS Nano. 2012 Apr 24;6(4):3109-13. doi: 10.1021/nn204838m. Epub 2012 Mar 13. ACS Nano. 2012. PMID: 22414204

10

Electrical and optical properties of InP nanowire ensemble p⁺-i-n⁺ photodetectors.

Pettersson H, Zubritskaya I, Nghia NT, Wallentin J, Borgström MT, Storm K, Landin L, Wickert P, Capasso F, Samuelson L. Pettersson H, et al. Among authors: wallentin j. Nanotechnology. 2012 Apr 6;23(13):135201. doi: 10.1088/0957-4484/23/13/135201. Epub 2012 Mar 14. Nanotechnology. 2012. PMID: 22418741

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