Martin J - Search Results

1

Liu T, Liu S, Tu KH, Schmidt H, Chu L, Xiang D, Martin J, Eda G, Ross CA, Garaj S. Liu T, et al. Among authors: martin j. Nat Nanotechnol. 2019 Mar;14(3):223-226. doi: 10.1038/s41565-019-0361-x. Epub 2019 Feb 4. Nat Nanotechnol. 2019. PMID: 30718834

2

Transport properties of monolayer MoS2 grown by chemical vapor deposition.

Schmidt H, Wang S, Chu L, Toh M, Kumar R, Zhao W, Neto AH, Martin J, Adam S, Özyilmaz B, Eda G. Schmidt H, et al. Among authors: martin j. Nano Lett. 2014;14(4):1909-13. doi: 10.1021/nl4046922. Epub 2014 Mar 25. Nano Lett. 2014. PMID: 24640984

3

Polarity Tunable Trionic Electroluminescence in Monolayer WSe₂.

Wang J, Lin F, Verzhbitskiy I, Watanabe K, Taniguchi T, Martin J, Eda G. Wang J, et al. Among authors: martin j. Nano Lett. 2019 Oct 9;19(10):7470-7475. doi: 10.1021/acs.nanolett.9b03215. Epub 2019 Sep 18. Nano Lett. 2019. PMID: 31517494

4

Charge disproportionate molecular redox for discrete memristive and memcapacitive switching.

Goswami S, Rath SP, Thompson D, Hedström S, Annamalai M, Pramanick R, Ilic BR, Sarkar S, Hooda S, Nijhuis CA, Martin J, Williams RS, Goswami S, Venkatesan T. Goswami S, et al. Among authors: martin j. Nat Nanotechnol. 2020 May;15(5):380-389. doi: 10.1038/s41565-020-0653-1. Epub 2020 Mar 23. Nat Nanotechnol. 2020. PMID: 32203436

5

Modulation of Spin Dynamics in 2D Transition-Metal Dichalcogenide via Strain-Driven Symmetry Breaking.

Liu T, Xiang D, Ng HK, Han Z, Hippalgaonkar K, Suwardi A, Martin J, Garaj S, Wu J. Liu T, et al. Among authors: martin j. Adv Sci (Weinh). 2022 Jul;9(20):e2200816. doi: 10.1002/advs.202200816. Epub 2022 May 1. Adv Sci (Weinh). 2022. PMID: 35491496 Free PMC article.

6

Author Correction: Charge disproportionate molecular redox for discrete memristive and memcapacitive switching.

Goswami S, Rath SP, Thompson D, Hedström S, Annamalai M, Pramanick R, Ilic BR, Sarkar S, Hooda S, Nijhuis CA, Martin J, Williams RS, Goswami S, Venkatesan T. Goswami S, et al. Among authors: martin j. Nat Nanotechnol. 2023 Sep;18(9):1116. doi: 10.1038/s41565-023-01461-9. Nat Nanotechnol. 2023. PMID: 37369797 No abstract available.

7

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics.

Goswami S, Matula AJ, Rath SP, Hedström S, Saha S, Annamalai M, Sengupta D, Patra A, Ghosh S, Jani H, Sarkar S, Motapothula MR, Nijhuis CA, Martin J, Goswami S, Batista VS, Venkatesan T. Goswami S, et al. Among authors: martin j. Nat Mater. 2017 Dec;16(12):1216-1224. doi: 10.1038/nmat5009. Epub 2017 Oct 23. Nat Mater. 2017. PMID: 29058729

8

Gate controlled valley polarizer in bilayer graphene.

Chen H, Zhou P, Liu J, Qiao J, Oezyilmaz B, Martin J. Chen H, et al. Among authors: martin j. Nat Commun. 2020 Mar 5;11(1):1202. doi: 10.1038/s41467-020-15117-y. Nat Commun. 2020. PMID: 32139694 Free PMC article.

9

Controlled Growth of 1D MoSe₂ Nanoribbons with Spatially Modulated Edge States.

Cheng F, Xu H, Xu W, Zhou P, Martin J, Loh KP. Cheng F, et al. Among authors: martin j. Nano Lett. 2017 Feb 8;17(2):1116-1120. doi: 10.1021/acs.nanolett.6b04715. Epub 2017 Jan 20. Nano Lett. 2017. PMID: 28090772

10

Biomolecular control over local gating in bilayer graphene induced by ferritin.

Karuppannan SK, Martin J, Xu W, Pasula RR, Lim S, Nijhuis CA. Karuppannan SK, et al. Among authors: martin j. iScience. 2022 Mar 21;25(4):104128. doi: 10.1016/j.isci.2022.104128. eCollection 2022 Apr 15. iScience. 2022. PMID: 35434555 Free PMC article.

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