Shen B - Search Results

1

Dominant Influence of Interface Roughness Scattering on the Performance of GaN Terahertz Quantum Cascade Lasers.

Cheng J, Quach P, Wang D, Liu F, Liu S, Yang L, Liu H, Shen B, Tong Y, Wang X. Cheng J, et al. Among authors: shen b. Nanoscale Res Lett. 2019 Jun 17;14(1):206. doi: 10.1186/s11671-019-3043-6. Nanoscale Res Lett. 2019. PMID: 31209591 Free PMC article.

2

Tunable surface electron spin splitting with electric double-layer transistors based on InN.

Yin C, Yuan H, Wang X, Liu S, Zhang S, Tang N, Xu F, Chen Z, Shimotani H, Iwasa Y, Chen Y, Ge W, Shen B. Yin C, et al. Among authors: shen b. Nano Lett. 2013 May 8;13(5):2024-9. doi: 10.1021/nl400153p. Epub 2013 Apr 29. Nano Lett. 2013. PMID: 23614498

3

Identification of helicity-dependent photocurrents from topological surface states in Bi2Se3 gated by ionic liquid.

Duan J, Tang N, He X, Yan Y, Zhang S, Qin X, Wang X, Yang X, Xu F, Chen Y, Ge W, Shen B. Duan J, et al. Among authors: shen b. Sci Rep. 2014 May 8;4:4889. doi: 10.1038/srep04889. Sci Rep. 2014. PMID: 24809330 Free PMC article.

4

Generation and electric control of spin-valley-coupled circular photogalvanic current in WSe2.

Yuan H, Wang X, Lian B, Zhang H, Fang X, Shen B, Xu G, Xu Y, Zhang SC, Hwang HY, Cui Y. Yuan H, et al. Among authors: shen b. Nat Nanotechnol. 2014 Oct;9(10):851-7. doi: 10.1038/nnano.2014.183. Epub 2014 Sep 7. Nat Nanotechnol. 2014. PMID: 25194947

5

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.

Sang L, Zhu QS, Yang SY, Liu GP, Li HJ, Wei HY, Jiao CM, Liu SM, Wang ZG, Zhou XW, Mao W, Hao Y, Shen B. Sang L, et al. Among authors: shen b. Nanoscale Res Lett. 2014 Sep 4;9(1):470. doi: 10.1186/1556-276X-9-470. eCollection 2014. Nanoscale Res Lett. 2014. PMID: 25258600 Free PMC article.

6

Evidence of type-II band alignment in III-nitride semiconductors: experimental and theoretical investigation for In 0.17 Al 0.83 N/GaN heterostructures.

Wang J, Xu F, Zhang X, An W, Li XZ, Song J, Ge W, Tian G, Lu J, Wang X, Tang N, Yang Z, Li W, Wang W, Jin P, Chen Y, Shen B. Wang J, et al. Among authors: shen b. Sci Rep. 2014 Oct 6;4:6521. doi: 10.1038/srep06521. Sci Rep. 2014. PMID: 25283334 Free PMC article.

7

Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers.

He C, Qin Z, Xu F, Hou M, Zhang S, Zhang L, Wang X, Ge W, Shen B. He C, et al. Among authors: shen b. Sci Rep. 2015 Aug 12;5:13046. doi: 10.1038/srep13046. Sci Rep. 2015. PMID: 26267249 Free PMC article.

8

Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

Wang P, Yuan Y, Zhao C, Wang X, Zheng X, Rong X, Wang T, Sheng B, Wang Q, Zhang Y, Bian L, Yang X, Xu F, Qin Z, Li X, Zhang X, Shen B. Wang P, et al. Among authors: shen b. Nano Lett. 2016 Feb 10;16(2):1328-34. doi: 10.1021/acs.nanolett.5b04726. Epub 2016 Jan 6. Nano Lett. 2016. PMID: 26694227

9

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition.

Cheng J, Yang X, Sang L, Guo L, Zhang J, Wang J, He C, Zhang L, Wang M, Xu F, Tang N, Qin Z, Wang X, Shen B. Cheng J, et al. Among authors: shen b. Sci Rep. 2016 Mar 10;6:23020. doi: 10.1038/srep23020. Sci Rep. 2016. PMID: 26960730 Free PMC article.

10

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system.

He C, Qin Z, Xu F, Zhang L, Wang J, Hou M, Zhang S, Wang X, Ge W, Shen B. He C, et al. Among authors: shen b. Sci Rep. 2016 Apr 26;6:25124. doi: 10.1038/srep25124. Sci Rep. 2016. PMID: 27112969 Free PMC article.

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