Zheng YJ - Search Results

1

High-Energy Gain Upconversion in Monolayer Tungsten Disulfide Photodetectors.

Wang Q, Zhang Q, Zhao X, Zheng YJ, Wang J, Luo X, Dan J, Zhu R, Liang Q, Zhang L, Wong PKJ, He X, Huang YL, Wang X, Pennycook SJ, Eda G, Wee ATS. Wang Q, et al. Among authors: zheng yj. Nano Lett. 2019 Aug 14;19(8):5595-5603. doi: 10.1021/acs.nanolett.9b02136. Epub 2019 Jul 1. Nano Lett. 2019. PMID: 31241969

2

Gap States at Low-Angle Grain Boundaries in Monolayer Tungsten Diselenide.

Huang YL, Ding Z, Zhang W, Chang YH, Shi Y, Li LJ, Song Z, Zheng YJ, Chi D, Quek SY, Wee AT. Huang YL, et al. Among authors: zheng yj. Nano Lett. 2016 Jun 8;16(6):3682-8. doi: 10.1021/acs.nanolett.6b00888. Epub 2016 May 9. Nano Lett. 2016. PMID: 27140667

3

Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides.

Zheng YJ, Huang YL, Chen Y, Zhao W, Eda G, Spataru CD, Zhang W, Chang YH, Li LJ, Chi D, Quek SY, Wee AT. Zheng YJ, et al. ACS Nano. 2016 Feb 23;10(2):2476-84. doi: 10.1021/acsnano.5b07314. Epub 2016 Jan 26. ACS Nano. 2016. PMID: 26792247

4

Point Defects and Localized Excitons in 2D WSe₂.

Zheng YJ, Chen Y, Huang YL, Gogoi PK, Li MY, Li LJ, Trevisanutto PE, Wang Q, Pennycook SJ, Wee ATS, Quek SY. Zheng YJ, et al. ACS Nano. 2019 May 28;13(5):6050-6059. doi: 10.1021/acsnano.9b02316. Epub 2019 May 16. ACS Nano. 2019. PMID: 31074961

5

Bandgap tunability at single-layer molybdenum disulphide grain boundaries.

Huang YL, Chen Y, Zhang W, Quek SY, Chen CH, Li LJ, Hsu WT, Chang WH, Zheng YJ, Chen W, Wee AT. Huang YL, et al. Among authors: zheng yj. Nat Commun. 2015 Feb 17;6:6298. doi: 10.1038/ncomms7298. Nat Commun. 2015. PMID: 25687991 Free article.

6

Tunable inverted gap in monolayer quasi-metallic MoS₂ induced by strong charge-lattice coupling.

Yin X, Wang Q, Cao L, Tang CS, Luo X, Zheng Y, Wong LM, Wang SJ, Quek SY, Zhang W, Rusydi A, Wee ATS. Yin X, et al. Nat Commun. 2017 Sep 7;8(1):486. doi: 10.1038/s41467-017-00640-2. Nat Commun. 2017. PMID: 28883392 Free PMC article.

7

Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor.

Song Z, Schultz T, Ding Z, Lei B, Han C, Amsalem P, Lin T, Chi D, Wong SL, Zheng YJ, Li MY, Li LJ, Chen W, Koch N, Huang YL, Wee ATS. Song Z, et al. Among authors: zheng yj. ACS Nano. 2017 Sep 26;11(9):9128-9135. doi: 10.1021/acsnano.7b03953. Epub 2017 Aug 3. ACS Nano. 2017. PMID: 28753270

8

The organic-2D transition metal dichalcogenide heterointerface.

Huang YL , Zheng YJ , Song Z , Chi D , Wee ATS , Quek SY . Huang YL , et al. Among authors: zheng yj. Chem Soc Rev. 2018 May 8;47(9):3241-3264. doi: 10.1039/c8cs00159f. Chem Soc Rev. 2018. PMID: 29651487 Review.

9

Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet.

Wong PKJ, Zhang W, Bussolotti F, Yin X, Herng TS, Zhang L, Huang YL, Vinai G, Krishnamurthi S, Bukhvalov DW, Zheng YJ, Chua R, N'Diaye AT, Morton SA, Yang CY, Ou Yang KH, Torelli P, Chen W, Goh KEJ, Ding J, Lin MT, Brocks G, de Jong MP, Castro Neto AH, Wee ATS. Wong PKJ, et al. Among authors: zheng yj. Adv Mater. 2019 Jun;31(23):e1901185. doi: 10.1002/adma.201901185. Epub 2019 Apr 18. Adv Mater. 2019. PMID: 30997712

10

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation.

Liu D, Chen X, Yan Y, Zhang Z, Jin Z, Yi K, Zhang C, Zheng Y, Wang Y, Yang J, Xu X, Chen J, Lu Y, Wei D, Wee ATS, Wei D. Liu D, et al. Nat Commun. 2019 Mar 13;10(1):1188. doi: 10.1038/s41467-019-09016-0. Nat Commun. 2019. PMID: 30867418 Free PMC article.

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