Ye PD - Search Results

1

Room-Temperature Electrocaloric Effect in Layered Ferroelectric CuInP₂S₆ for Solid-State Refrigeration.

Si M, Saha AK, Liao PY, Gao S, Neumayer SM, Jian J, Qin J, Balke Wisinger N, Wang H, Maksymovych P, Wu W, Gupta SK, Ye PD. Si M, et al. Among authors: ye pd. ACS Nano. 2019 Aug 27;13(8):8760-8765. doi: 10.1021/acsnano.9b01491. Epub 2019 Aug 6. ACS Nano. 2019. PMID: 31374166

2

Channel length scaling of MoS2 MOSFETs.

Liu H, Neal AT, Ye PD. Liu H, et al. Among authors: ye pd. ACS Nano. 2012 Oct 23;6(10):8563-9. doi: 10.1021/nn303513c. Epub 2012 Sep 12. ACS Nano. 2012. PMID: 22957650

3

Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.

Liu H, Si M, Najmaei S, Neal AT, Du Y, Ajayan PM, Lou J, Ye PD. Liu H, et al. Among authors: ye pd. Nano Lett. 2013 Jun 12;13(6):2640-6. doi: 10.1021/nl400778q. Epub 2013 May 20. Nano Lett. 2013. PMID: 23679044

4

Magneto-transport in MoS2: phase coherence, spin-orbit scattering, and the hall factor.

Neal AT, Liu H, Gu J, Ye PD. Neal AT, et al. Among authors: ye pd. ACS Nano. 2013 Aug 27;7(8):7077-82. doi: 10.1021/nn402377g. Epub 2013 Jul 31. ACS Nano. 2013. PMID: 23889126

5

Switching mechanism in single-layer molybdenum disulfide transistors: an insight into current flow across Schottky barriers.

Liu H, Si M, Deng Y, Neal AT, Du Y, Najmaei S, Ajayan PM, Lou J, Ye PD. Liu H, et al. Among authors: ye pd. ACS Nano. 2014 Jan 28;8(1):1031-8. doi: 10.1021/nn405916t. Epub 2013 Dec 23. ACS Nano. 2014. PMID: 24351134

6

Phosphorene: an unexplored 2D semiconductor with a high hole mobility.

Liu H, Neal AT, Zhu Z, Luo Z, Xu X, Tománek D, Ye PD. Liu H, et al. Among authors: ye pd. ACS Nano. 2014 Apr 22;8(4):4033-41. doi: 10.1021/nn501226z. Epub 2014 Mar 21. ACS Nano. 2014. PMID: 24655084

7

Two-dimensional TaSe2 metallic crystals: spin-orbit scattering length and breakdown current density.

Neal AT, Du Y, Liu H, Ye PD. Neal AT, et al. Among authors: ye pd. ACS Nano. 2014 Sep 23;8(9):9137-42. doi: 10.1021/nn5027164. Epub 2014 Sep 3. ACS Nano. 2014. PMID: 25133691

8

Device perspective for black phosphorus field-effect transistors: contact resistance, ambipolar behavior, and scaling.

Du Y, Liu H, Deng Y, Ye PD. Du Y, et al. Among authors: ye pd. ACS Nano. 2014 Oct 28;8(10):10035-42. doi: 10.1021/nn502553m. Epub 2014 Oct 17. ACS Nano. 2014. PMID: 25314022

9

Performance potential and limit of MoS2 transistors.

Li X, Yang L, Si M, Li S, Huang M, Ye P, Wu Y. Li X, et al. Adv Mater. 2015 Mar 4;27(9):1547-52. doi: 10.1002/adma.201405068. Epub 2015 Jan 13. Adv Mater. 2015. PMID: 25586919

10

Mechanisms of current fluctuation in ambipolar black phosphorus field-effect transistors.

Li X, Du Y, Si M, Yang L, Li S, Li T, Xiong X, Ye P, Wu Y. Li X, et al. Nanoscale. 2016 Feb 14;8(6):3572-8. doi: 10.1039/c5nr06647f. Epub 2016 Jan 25. Nanoscale. 2016. PMID: 26806878

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