Lee JH - Search Results

1

Analog Complementary Metal-Oxide-Semiconductor Integrate-and-Fire Neuron Circuit for Overflow Retaining in Hardware Spiking Neural Networks.

Hwang S, Lee JJ, Kwon MW, Baek MH, Jang T, Chang J, Lee JH, Park BG. Hwang S, et al. Among authors: lee jh, lee jj. J Nanosci Nanotechnol. 2020 May 1;20(5):3117-3122. doi: 10.1166/jnn.2020.17390. J Nanosci Nanotechnol. 2020. PMID: 31635655

2

Histamine H1 receptor induces cytosolic calcium increase and aquaporin translocation in human salivary gland cells.

Kim JH, Park SH, Moon YW, Hwang S, Kim D, Jo SH, Oh SB, Kim JS, Jahng JW, Lee JH, Lee SJ, Choi SY, Park K. Kim JH, et al. Among authors: lee sj, lee jh. J Pharmacol Exp Ther. 2009 Aug;330(2):403-12. doi: 10.1124/jpet.109.153023. Epub 2009 May 14. J Pharmacol Exp Ther. 2009. PMID: 19443731

3

Autoantibodies in primary Sjögren's syndrome patients induce internalization of muscarinic type 3 receptors.

Jin M, Hwang SM, Davies AJ, Shin Y, Bae JS, Lee JH, Lee EB, Song YW, Park K. Jin M, et al. Among authors: lee eb, lee jh. Biochim Biophys Acta. 2012 Feb;1822(2):161-7. doi: 10.1016/j.bbadis.2011.11.012. Epub 2011 Nov 21. Biochim Biophys Acta. 2012. PMID: 22137887 Free article.

4

3-D simulation of nanopore structure for DNA sequencing.

Park JM, Pak YE, Chun H, Lee JH. Park JM, et al. Among authors: lee jh. J Nanosci Nanotechnol. 2012 Jul;12(7):5160-3. doi: 10.1166/jnn.2012.6384. J Nanosci Nanotechnol. 2012. PMID: 22966538

5

Co-integration of nano-scale vertical- and horizontal-channel metal-oxide-semiconductor field-effect transistors for low power CMOS technology.

Sun MC, Kim G, Kim SW, Kim HW, Kim H, Lee JH, Shin H, Park BG. Sun MC, et al. Among authors: lee jh. J Nanosci Nanotechnol. 2012 Jul;12(7):5313-7. doi: 10.1166/jnn.2012.6226. J Nanosci Nanotechnol. 2012. PMID: 22966563

6

Phenomenological analysis of random telegraph noise in amorphous TiOx-based bipolar resistive switching random access memory devices.

Lee JK, Lee JW, Bae JH, Park J, Chung SW, Roh JS, Hong SJ, Lee JH. Lee JK, et al. Among authors: lee jw, lee jh. J Nanosci Nanotechnol. 2012 Jul;12(7):5392-6. doi: 10.1166/jnn.2012.6249. J Nanosci Nanotechnol. 2012. PMID: 22966577

7

Suppression of inhibit cell Vth disturbance in three dimensional stack NAND flash memory.

Choe BI, Park BG, Lee JK, Lee JH. Choe BI, et al. Among authors: lee jh, lee jk. J Nanosci Nanotechnol. 2013 Sep;13(9):6382-8. doi: 10.1166/jnn.2013.7623. J Nanosci Nanotechnol. 2013. PMID: 24205666

8

Effect of adjacent bit-line cell interference on low frequency noise in NAND flash memory cell strings.

Jo BS, Joe SM, Jeong MK, Han KR, Park SK, Lee JH. Jo BS, et al. Among authors: lee jh. J Nanosci Nanotechnol. 2013 Sep;13(9):6405-8. doi: 10.1166/jnn.2013.7621. J Nanosci Nanotechnol. 2013. PMID: 24205670

9

Parameter modeling for nanopore lonic field effect transistors in 3-D device simulation.

Park JM, Chun H, Park YE, Park BG, Lee JH. Park JM, et al. Among authors: lee jh. J Nanosci Nanotechnol. 2014 Nov;14(11):8171-5. doi: 10.1166/jnn.2014.9906. J Nanosci Nanotechnol. 2014. PMID: 25958494

10

Ultralow power switching in a silicon-rich SiN_y/SiN_x double-layer resistive memory device.

Kim S, Chang YF, Kim MH, Bang S, Kim TH, Chen YC, Lee JH, Park BG. Kim S, et al. Among authors: lee jh. Phys Chem Chem Phys. 2017 Jul 26;19(29):18988-18995. doi: 10.1039/c7cp03120c. Phys Chem Chem Phys. 2017. PMID: 28702540

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