Peng LM - Search Results

1

Light-Enhanced Ion Migration in Two-Dimensional Perovskite Single Crystals Revealed in Carbon Nanotubes/Two-Dimensional Perovskite Heterostructure and Its Photomemory Application.

Li YT, Ding L, Li JZ, Kang J, Li DH, Ren L, Ju ZY, Sun MX, Ma JQ, Tian Y, Gou GY, Xie D, Tian H, Yang Y, Wang LW, Peng LM, Ren TL. Li YT, et al. Among authors: peng lm. ACS Cent Sci. 2019 Nov 27;5(11):1857-1865. doi: 10.1021/acscentsci.9b00839. Epub 2019 Oct 21. ACS Cent Sci. 2019. PMID: 31807687 Free PMC article.

2

Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage.

Zhang Z, Wang S, Ding L, Liang X, Pei T, Shen J, Xu H, Chen Q, Cui R, Li Y, Peng LM. Zhang Z, et al. Among authors: peng lm. Nano Lett. 2008 Nov;8(11):3696-701. doi: 10.1021/nl8018802. Epub 2008 Oct 24. Nano Lett. 2008. PMID: 18947214

3

Almost perfectly symmetric SWCNT-based CMOS devices and scaling.

Zhang Z, Wang S, Wang Z, Ding L, Pei T, Hu Z, Liang X, Chen Q, Li Y, Peng LM. Zhang Z, et al. Among authors: peng lm. ACS Nano. 2009 Nov 24;3(11):3781-7. doi: 10.1021/nn901079p. ACS Nano. 2009. PMID: 19845337

4

Y-contacted high-performance n-type single-walled carbon nanotube field-effect transistors: scaling and comparison with Sc-contacted devices.

Ding L, Wang S, Zhang Z, Zeng Q, Wang Z, Pei T, Yang L, Liang X, Shen J, Chen Q, Cui R, Li Y, Peng LM. Ding L, et al. Among authors: peng lm. Nano Lett. 2009 Dec;9(12):4209-14. doi: 10.1021/nl9024243. Nano Lett. 2009. PMID: 19995085

5

Growth and performance of yttrium oxide as an ideal high-kappa gate dielectric for carbon-based electronics.

Wang Z, Xu H, Zhang Z, Wang S, Ding L, Zeng Q, Yang L, Pei T, Liang X, Gao M, Peng LM. Wang Z, et al. Among authors: peng lm. Nano Lett. 2010 Jun 9;10(6):2024-30. doi: 10.1021/nl100022u. Nano Lett. 2010. PMID: 20455575

6

Large signal operation of small band-gap carbon nanotube-based ambipolar transistor: a high-performance frequency doubler.

Wang Z, Ding L, Pei T, Zhang Z, Wang S, Yu T, Ye X, Peng F, Li Y, Peng LM. Wang Z, et al. Among authors: peng lm, peng f. Nano Lett. 2010 Sep 8;10(9):3648-55. doi: 10.1021/nl102111j. Nano Lett. 2010. PMID: 20677775

7

High-performance carbon nanotube light-emitting diodes with asymmetric contacts.

Wang S, Zeng Q, Yang L, Zhang Z, Wang Z, Pei T, Ding L, Liang X, Gao M, Li Y, Peng LM. Wang S, et al. Among authors: peng lm. Nano Lett. 2011 Jan 12;11(1):23-9. doi: 10.1021/nl101513z. Epub 2010 Nov 30. Nano Lett. 2011. PMID: 21117697

8

Self-aligned U-gate carbon nanotube field-effect transistor with extremely small parasitic capacitance and drain-induced barrier lowering.

Ding L, Wang Z, Pei T, Zhang Z, Wang S, Xu H, Peng F, Li Y, Peng LM. Ding L, et al. Among authors: peng lm, peng f. ACS Nano. 2011 Apr 26;5(4):2512-9. doi: 10.1021/nn102091h. Epub 2011 Mar 11. ACS Nano. 2011. PMID: 21370813

9

CMOS-based carbon nanotube pass-transistor logic integrated circuits.

Ding L, Zhang Z, Liang S, Pei T, Wang S, Li Y, Zhou W, Liu J, Peng LM. Ding L, et al. Among authors: peng lm. Nat Commun. 2012 Feb 14;3:677. doi: 10.1038/ncomms1682. Nat Commun. 2012. PMID: 22334080 Free PMC article.

10

Carbon nanotube field-effect transistors for use as pass transistors in integrated logic gates and full subtractor circuits.

Ding L, Zhang Z, Pei T, Liang S, Wang S, Zhou W, Liu J, Peng LM. Ding L, et al. Among authors: peng lm. ACS Nano. 2012 May 22;6(5):4013-9. doi: 10.1021/nn300320j. Epub 2012 Apr 13. ACS Nano. 2012. PMID: 22482426

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