Cheng HH - Search Results

1

Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base.

Hung WT, Barshilia D, Basu R, Cheng HH, Chang GE. Hung WT, et al. Among authors: cheng hh. Opt Lett. 2020 Mar 1;45(5):1088-1091. doi: 10.1364/OL.383171. Opt Lett. 2020. PMID: 32108777

2

Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared response.

Chang GE, Chen SW, Cheng HH. Chang GE, et al. Among authors: cheng hh. Opt Express. 2016 Aug 8;24(16):17562-71. doi: 10.1364/OE.24.017562. Opt Express. 2016. PMID: 27505727 Free article.

3

Sn-based waveguide p-i-n photodetector with strained GeSn/Ge multiple-quantum-well active layer.

Huang YH, Chang GE, Li H, Cheng HH. Huang YH, et al. Among authors: cheng hh. Opt Lett. 2017 May 1;42(9):1652-1655. doi: 10.1364/OL.42.001652. Opt Lett. 2017. PMID: 28454127

4

GeSn resonant-cavity-enhanced photodetectors on silicon-on-insulator platforms.

Huang BJ, Lin JH, Cheng HH, Chang GE. Huang BJ, et al. Among authors: cheng hh. Opt Lett. 2018 Mar 15;43(6):1215-1218. doi: 10.1364/OL.43.001215. Opt Lett. 2018. PMID: 29543254

5

GeSn resonant-cavity-enhanced photodetectors for efficient photodetection at the 2 µm wavelength band.

Tsai CH, Huang BJ, Soref RA, Sun G, Cheng HH, Chang GE. Tsai CH, et al. Among authors: cheng hh. Opt Lett. 2020 Mar 15;45(6):1463-1466. doi: 10.1364/OL.381960. Opt Lett. 2020. PMID: 32163992

6

Strain-free GeSn nanomembranes enabled by transfer-printing techniques for advanced optoelectronic applications.

Tai YC, Yeh PL, An S, Cheng HH, Kim M, Chang GE. Tai YC, et al. Among authors: cheng hh. Nanotechnology. 2020 Oct 30;31(44):445301. doi: 10.1088/1361-6528/aba6b1. Epub 2020 Jul 16. Nanotechnology. 2020. PMID: 32674093

7

GeSn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics.

Tsai CH, Lin KC, Cheng CY, Lee KC, Cheng HH, Chang GE. Tsai CH, et al. Among authors: cheng hh, cheng cy. Opt Lett. 2021 Feb 15;46(4):864-867. doi: 10.1364/OL.414580. Opt Lett. 2021. PMID: 33577533

8

Raman scattering study of GeSn under 〈1 0 0〉 and 〈1 1 0〉 uniaxial stress.

An S, Tai YC, Lee KC, Shin SH, Cheng HH, Chang GE, Kim M. An S, et al. Among authors: cheng hh. Nanotechnology. 2021 Jun 9;32(35). doi: 10.1088/1361-6528/ac03d7. Nanotechnology. 2021. PMID: 34020429

9

Planar GeSn lateral p-i-n resonant-cavity-enhanced photodetectors for short-wave infrared integrated photonics.

Chang CY, Bansal R, Lee KC, Sun G, Soref R, Cheng HH, Chang GE. Chang CY, et al. Among authors: cheng hh. Opt Lett. 2021 Jul 1;46(13):3316-3319. doi: 10.1364/OL.427529. Opt Lett. 2021. PMID: 34197445

10

Temperature-dependent characteristics of GeSn/Ge multiple-quantum-well photoconductors on silicon.

Lin KC, Huang PR, Li H, Cheng HH, Chang GE. Lin KC, et al. Among authors: cheng hh. Opt Lett. 2021 Aug 1;46(15):3604-3607. doi: 10.1364/OL.432116. Opt Lett. 2021. PMID: 34329235

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