Jeon YR - Search Results

1

The coexistence of threshold and memory switching characteristics of ALD HfO₂ memristor synaptic arrays for energy-efficient neuromorphic computing.

Abbas H, Abbas Y, Hassan G, Sokolov AS, Jeon YR, Ku B, Kang CJ, Choi C. Abbas H, et al. Among authors: jeon yr. Nanoscale. 2020 Jul 9;12(26):14120-14134. doi: 10.1039/d0nr02335c. Nanoscale. 2020. PMID: 32597451

2

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device.

Abbas Y, Jeon YR, Sokolov AS, Kim S, Ku B, Choi C. Abbas Y, et al. Among authors: jeon yr. Sci Rep. 2018 Jan 19;8(1):1228. doi: 10.1038/s41598-018-19575-9. Sci Rep. 2018. PMID: 29352274 Free PMC article.

3

Engineering synaptic characteristics of TaO_x/HfO₂ bi-layered resistive switching device.

Kim S, Abbas Y, Jeon YR, Sokolov AS, Ku B, Choi C. Kim S, et al. Among authors: jeon yr. Nanotechnology. 2018 Oct 12;29(41):415204. doi: 10.1088/1361-6528/aad64c. Epub 2018 Jul 27. Nanotechnology. 2018. PMID: 30051887

4

The observation of resistive switching characteristics using transparent and biocompatible Cu²⁺-doped salmon DNA composite thin film.

Abbas Y, Dugasani SR, Raza MT, Jeon YR, Park SH, Choi C. Abbas Y, et al. Among authors: jeon yr. Nanotechnology. 2019 Aug 16;30(33):335203. doi: 10.1088/1361-6528/ab1cfd. Epub 2019 Apr 26. Nanotechnology. 2019. PMID: 31026860

5

Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device.

Jeon YR, Abbas Y, Sokolov AS, Kim S, Ku B, Choi C. Jeon YR, et al. ACS Appl Mater Interfaces. 2019 Jul 3;11(26):23329-23336. doi: 10.1021/acsami.9b05384. Epub 2019 Jun 24. ACS Appl Mater Interfaces. 2019. PMID: 31252457

6

3D Stackable Synaptic Transistor for 3D Integrated Artificial Neural Networks.

Kim SK, Jeong Y, Bidenko P, Lim HR, Jeon YR, Kim H, Lee YJ, Geum DM, Han J, Choi C, Kim HJ, Kim S. Kim SK, et al. Among authors: jeon yr. ACS Appl Mater Interfaces. 2020 Feb 12;12(6):7372-7380. doi: 10.1021/acsami.9b22008. Epub 2020 Feb 3. ACS Appl Mater Interfaces. 2020. PMID: 31939649

7

Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe₂ Material.

Jeon YR, Choi J, Kwon JD, Park MH, Kim Y, Choi C. Jeon YR, et al. ACS Appl Mater Interfaces. 2021 Mar 3;13(8):10161-10170. doi: 10.1021/acsami.0c18784. Epub 2021 Feb 16. ACS Appl Mater Interfaces. 2021. PMID: 33591167

8

Analog Synaptic Transistor with Al-Doped HfO₂ Ferroelectric Thin Film.

Kim D, Jeon YR, Ku B, Chung C, Kim TH, Yang S, Won U, Jeong T, Choi C. Kim D, et al. Among authors: jeon yr. ACS Appl Mater Interfaces. 2021 Nov 10;13(44):52743-52753. doi: 10.1021/acsami.1c12735. Epub 2021 Nov 1. ACS Appl Mater Interfaces. 2021. PMID: 34723461

9

Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO₂ (La:HfO₂) and TaN-Based Artificial Synapses.

Jeon YR, Kim D, Ku B, Chung C, Choi C. Jeon YR, et al. ACS Appl Mater Interfaces. 2023 Dec 2. doi: 10.1021/acsami.3c13159. Online ahead of print. ACS Appl Mater Interfaces. 2023. PMID: 38041654

10

Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defects.

Jeon YR, Akinwande D, Choi C. Jeon YR, et al. Nanoscale Horiz. 2024 Apr 29;9(5):853-862. doi: 10.1039/d3nh00571b. Nanoscale Horiz. 2024. PMID: 38505960

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