Bae JH - Search Results

1

Proposition of deposition and bias conditions for optimal signal-to-noise-ratio in resistor- and FET-type gas sensors.

Shin W , Jung G , Hong S , Jeong Y , Park J , Kim D , Jang D , Kwon D , Bae JH , Park BG , Lee JH . Shin W , et al. Among authors: bae jh. Nanoscale. 2020 Oct 14;12(38):19768-19775. doi: 10.1039/d0nr04406g. Epub 2020 Sep 23. Nanoscale. 2020. PMID: 32966525

2

Phenomenological analysis of random telegraph noise in amorphous TiOx-based bipolar resistive switching random access memory devices.

Lee JK, Lee JW, Bae JH, Park J, Chung SW, Roh JS, Hong SJ, Lee JH. Lee JK, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2012 Jul;12(7):5392-6. doi: 10.1166/jnn.2012.6249. J Nanosci Nanotechnol. 2012. PMID: 22966577

3

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

Bae JH, Lee JH. Bae JH, et al. J Nanosci Nanotechnol. 2016 May;16(5):4919-23. doi: 10.1166/jnn.2016.12258. J Nanosci Nanotechnol. 2016. PMID: 27483846

4

Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature.

Hong S , Shin J , Hong Y , Wu M , Jang D , Jeong Y , Jung G , Bae JH , Jang HW , Lee JH . Hong S , et al. Among authors: bae jh. Nanoscale. 2018 Sep 27;10(37):18019-18027. doi: 10.1039/c8nr04472d. Nanoscale. 2018. PMID: 30226514

5

A Split-Gate Positive Feedback Device With an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit.

Choi KB, Woo SY, Kang WM, Lee S, Kim CH, Bae JH, Lim S, Lee JH. Choi KB, et al. Among authors: bae jh. Front Neurosci. 2018 Oct 9;12:704. doi: 10.3389/fnins.2018.00704. eCollection 2018. Front Neurosci. 2018. PMID: 30356702 Free PMC article.

6

Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current.

Bae JH, Lim S, Kwon D, Lee ST, Kim H, Lee JH. Bae JH, et al. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6135-6138. doi: 10.1166/jnn.2019.17003. J Nanosci Nanotechnol. 2019. PMID: 31026923

7

Humidity-Sensitive Field Effect Transistor with In₂O₃ Nanoparticles as a Sensing Layer.

Hong S, Shin J, Hong Y, Wu M, Jeong Y, Jang D, Jung G, Bae JH, Lee JH. Hong S, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6656-6662. doi: 10.1166/jnn.2019.17092. J Nanosci Nanotechnol. 2019. PMID: 31027006

8

Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells.

Lee ST, Lim S, Choi N, Bae JH, Kwon D, Kim HS, Park BG, Lee JH. Lee ST, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2020 Jul 1;20(7):4138-4142. doi: 10.1166/jnn.2020.17791. J Nanosci Nanotechnol. 2020. PMID: 31968431

9

Implementation of Synaptic Device Using Various High-k Gate Dielectric Stacks.

Seo YT, Park MK, Bae JH, Park BG, Lee JH. Seo YT, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2020 Jul 1;20(7):4292-4297. doi: 10.1166/jnn.2020.17788. J Nanosci Nanotechnol. 2020. PMID: 31968460

10

Pruning for Hardware-Based Deep Spiking Neural Networks Using Gated Schottky Diode as Synaptic Devices.

Lee ST, Lim S, Bae JH, Kwon D, Kim HS, Park BG, Lee JH. Lee ST, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2020 Nov 1;20(11):6603-6608. doi: 10.1166/jnn.2020.18772. J Nanosci Nanotechnol. 2020. PMID: 32604482

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