Zschieschang U - Search Results

1

Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors.

Geiger M, Hagel M, Reindl T, Weis J, Weitz RT, Solodenko H, Schmitz G, Zschieschang U, Klauk H, Acharya R. Geiger M, et al. Among authors: zschieschang u. Sci Rep. 2021 Mar 18;11(1):6382. doi: 10.1038/s41598-021-85517-7. Sci Rep. 2021. PMID: 33737629 Free PMC article.

2

Low-voltage organic transistors with an amorphous molecular gate dielectric.

Halik M, Klauk H, Zschieschang U, Schmid G, Dehm C, Schütz M, Maisch S, Effenberger F, Brunnbauer M, Stellacci F. Halik M, et al. Among authors: zschieschang u. Nature. 2004 Oct 21;431(7011):963-6. doi: 10.1038/nature02987. Nature. 2004. PMID: 15496917

3

High-performance carbon nanotube field effect transistors with a thin gate dielectric based on a self-assembled monolayer.

Weitz RT, Zschieschang U, Effenberger F, Klauk H, Burghard M, Kern K. Weitz RT, et al. Among authors: zschieschang u. Nano Lett. 2007 Jan;7(1):22-7. doi: 10.1021/nl061534m. Nano Lett. 2007. PMID: 17212434

4

Ultralow-power organic complementary circuits.

Klauk H, Zschieschang U, Pflaum J, Halik M. Klauk H, et al. Among authors: zschieschang u. Nature. 2007 Feb 15;445(7129):745-8. doi: 10.1038/nature05533. Nature. 2007. PMID: 17301788

5

Microcontact-printed self-assembled monolayers as ultrathin gate dielectrics in organic thin-film transistors and complementary circuits.

Zschieschang U, Halik M, Klauk H. Zschieschang U, et al. Langmuir. 2008 Mar 4;24(5):1665-9. doi: 10.1021/la703818d. Epub 2008 Jan 17. Langmuir. 2008. PMID: 18198917

6

Organic n-channel transistors based on core-cyanated perylene carboxylic diimide derivatives.

Weitz RT, Amsharov K, Zschieschang U, Villas EB, Goswami DK, Burghard M, Dosch H, Jansen M, Kern K, Klauk H. Weitz RT, et al. Among authors: zschieschang u. J Am Chem Soc. 2008 Apr 9;130(14):4637-45. doi: 10.1021/ja074675e. Epub 2008 Mar 13. J Am Chem Soc. 2008. PMID: 18336020

7

Organic transistors manufactured using inkjet technology with subfemtoliter accuracy.

Sekitani T, Noguchi Y, Zschieschang U, Klauk H, Someya T. Sekitani T, et al. Among authors: zschieschang u. Proc Natl Acad Sci U S A. 2008 Apr 1;105(13):4976-80. doi: 10.1073/pnas.0708340105. Epub 2008 Mar 24. Proc Natl Acad Sci U S A. 2008. PMID: 18362348 Free PMC article.

8

Highly reliable carbon nanotube transistors with patterned gates and molecular gate dielectric.

Weitz RT, Zschieschang U, Forment-Aliaga A, Kälblein D, Burghard M, Kern K, Klauk H. Weitz RT, et al. Among authors: zschieschang u. Nano Lett. 2009 Apr;9(4):1335-40. doi: 10.1021/nl802982m. Nano Lett. 2009. PMID: 19351189

9

Organic nonvolatile memory transistors for flexible sensor arrays.

Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T. Sekitani T, et al. Among authors: zschieschang u. Science. 2009 Dec 11;326(5959):1516-9. doi: 10.1126/science.1179963. Science. 2009. PMID: 20007895

10

Flexible low-voltage organic transistors and circuits based on a high-mobility organic semiconductor with good air stability.

Zschieschang U, Ante F, Yamamoto T, Takimiya K, Kuwabara H, Ikeda M, Sekitani T, Someya T, Kern K, Klauk H. Zschieschang U, et al. Adv Mater. 2010 Mar 5;22(9):982-5. doi: 10.1002/adma.200902740. Adv Mater. 2010. PMID: 20217824 No abstract available.

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