Toward Unusual-High Hole Mobility of p-Channel Field-Effect-Transistors.
Sun J, Zhuang X, Fan Y, Guo S, Cheng Z, Liu D, Yin Y, Tian Y, Pang Z, Wei Z, Song X, Liao L, Chen F, Ho JC, Yang ZX.
Sun J, et al. Among authors: yin y.
Small. 2021 Sep;17(37):e2102323. doi: 10.1002/smll.202102323. Epub 2021 Jul 19.
Small. 2021.
PMID: 34288454