Reduction process of dislocation and standby leakage current for embedded flash memory using nano-scale integration.
Sun JW, Park JH, Yang TS, Choi H, Cui Y, Choi E, Kim A, Oh LS, Lee SJ, Park H, Kim CH, Kim SK, Son H, Lee DH, Pyo SG.
Sun JW, et al. Among authors: oh ls.
J Nanosci Nanotechnol. 2013 Jun;13(6):4291-6. doi: 10.1166/jnn.2013.7172.
J Nanosci Nanotechnol. 2013.
PMID: 23862489