Kafar A - Search Results

1

Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry.

Schiavon D, Mroczyński R, Kafar A, Kamler G, Levchenko I, Najda S, Perlin P. Schiavon D, et al. Among authors: kafar a. Materials (Basel). 2021 Nov 30;14(23):7364. doi: 10.3390/ma14237364. Materials (Basel). 2021. PMID: 34885522 Free PMC article.

2

450 nm (Al,In)GaN optical amplifier with double 'j-shape' waveguide for master oscillator power amplifier systems.

Stanczyk S, Kafar A, Grzanka S, Sarzynski M, Mroczynski R, Najda S, Suski T, Perlin P. Stanczyk S, et al. Among authors: kafar a. Opt Express. 2018 Mar 19;26(6):7351-7357. doi: 10.1364/OE.26.007351. Opt Express. 2018. PMID: 29609291 Free article.

3

Kinetics of the radiative and nonradiative recombination in polar and semipolar InGaN quantum wells.

Marona L, Schiavon D, Baranowski M, Kudrawiec R, Gorczyca I, Kafar A, Perlin P. Marona L, et al. Among authors: kafar a. Sci Rep. 2020 Jan 27;10(1):1235. doi: 10.1038/s41598-020-58295-x. Sci Rep. 2020. PMID: 31988430 Free PMC article.

4

InGaN blue light emitting micro-diodes with current path defined by tunnel junction.

Gibasiewicz K, Bojarska-Cieślińska A, Muzioł G, Skierbiszewski C, Grzanka S, Kafar A, Perlin P, Najda S, Suski T. Gibasiewicz K, et al. Among authors: kafar a. Opt Lett. 2020 Aug 1;45(15):4332-4335. doi: 10.1364/OL.394629. Opt Lett. 2020. PMID: 32735291

5

Monolithic 45 Degree Deflecting Mirror as a Key Element for Realization of 2D Arrays of Laser Diodes Based on AlInGaN Semiconductors.

Saba K, Kafar A, Kacperski J, Gibasiewicz K, Schiavon D, Oto T, Grzanka S, Perlin P. Saba K, et al. Among authors: kafar a. Micromachines (Basel). 2023 Jan 31;14(2):352. doi: 10.3390/mi14020352. Micromachines (Basel). 2023. PMID: 36838052 Free PMC article.

6

InGaN Laser Diodes with Etched Facets for Photonic Integrated Circuit Applications.

Gibasiewicz K, Kafar A, Schiavon D, Saba K, Marona Ł, Kamińska E, Perlin P. Gibasiewicz K, et al. Among authors: kafar a. Micromachines (Basel). 2023 Feb 9;14(2):408. doi: 10.3390/mi14020408. Micromachines (Basel). 2023. PMID: 36838108 Free PMC article.

7

Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

Kafar A, Stanczyk S, Sarzynski M, Grzanka S, Goss J, Targowski G, Nowakowska-Siwinska A, Suski T, Perlin P. Kafar A, et al. Opt Express. 2016 May 2;24(9):9673-82. doi: 10.1364/OE.24.009673. Opt Express. 2016. PMID: 27137581 Free article.

8

Above 25 nm emission wavelength shift in blue-violet InGaN quantum wells induced by GaN substrate misorientation profiling: towards broad-band superluminescent diodes.

Kafar A, Ishii R, Gibasiewicz K, Matsuda Y, Stanczyk S, Schiavon D, Grzanka S, Tano M, Sakaki A, Suski T, Perlin P, Funato M, Kawakami Y. Kafar A, et al. Opt Express. 2020 Jul 20;28(15):22524-22539. doi: 10.1364/OE.394580. Opt Express. 2020. PMID: 32752512 Free article.

9

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction.

Pieniak K, Chlipala M, Turski H, Trzeciakowski W, Muziol G, Staszczak G, Kafar A, Makarowa I, Grzanka E, Grzanka S, Skierbiszewski C, Suski T. Pieniak K, et al. Among authors: kafar a. Opt Express. 2021 Jan 18;29(2):1824-1837. doi: 10.1364/OE.415258. Opt Express. 2021. PMID: 33726388 Free article.

10

Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation.

Aktas M, Grzanka S, Marona Ł, Goss J, Staszczak G, Kafar A, Perlin P. Aktas M, et al. Among authors: kafar a. Materials (Basel). 2024 Sep 13;17(18):4502. doi: 10.3390/ma17184502. Materials (Basel). 2024. PMID: 39336243 Free PMC article.

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