Massabuau FC - Search Results

1

Carrier dynamics at trench defects in InGaN/GaN quantum wells revealed by time-resolved cathodoluminescence.

Kusch G, Comish EJ, Loeto K, Hammersley S, Kappers MJ, Dawson P, Oliver RA, Massabuau FC. Kusch G, et al. Among authors: massabuau fc. Nanoscale. 2022 Jan 6;14(2):402-409. doi: 10.1039/d1nr06088k. Nanoscale. 2022. PMID: 34919106 Free article.

2

Directly correlated microscopy of trench defects in InGaN quantum wells.

O'Hanlon TJ, Massabuau FC, Bao A, Kappers MJ, Oliver RA. O'Hanlon TJ, et al. Among authors: massabuau fc. Ultramicroscopy. 2021 Dec;231:113255. doi: 10.1016/j.ultramic.2021.113255. Epub 2021 Mar 11. Ultramicroscopy. 2021. PMID: 33762123 Free article.

3

Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells.

Roble AA, Patra SK, Massabuau F, Frentrup M, Leontiadou MA, Dawson P, Kappers MJ, Oliver RA, Graham DM, Schulz S. Roble AA, et al. Sci Rep. 2019 Dec 11;9(1):18862. doi: 10.1038/s41598-019-53693-2. Sci Rep. 2019. PMID: 31827118 Free PMC article.

4

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells.

Christian G, Kappers M, Massabuau F, Humphreys C, Oliver R, Dawson P. Christian G, et al. Materials (Basel). 2018 Sep 15;11(9):1736. doi: 10.3390/ma11091736. Materials (Basel). 2018. PMID: 30223545 Free PMC article.

5

Characterisation of InGaN by Photoconductive Atomic Force Microscopy.

Weatherley TFK, Massabuau FC, Kappers MJ, Oliver RA. Weatherley TFK, et al. Among authors: massabuau fc. Materials (Basel). 2018 Sep 21;11(10):1794. doi: 10.3390/ma11101794. Materials (Basel). 2018. PMID: 30248899 Free PMC article.

6

Cross-shaped markers for the preparation of site-specific transmission electron microscopy lamellae using focused ion beam techniques.

O'Hanlon TJ, Bao A, Massabuau FC, Kappers MJ, Oliver RA. O'Hanlon TJ, et al. Among authors: massabuau fc. Ultramicroscopy. 2020 May;212:112970. doi: 10.1016/j.ultramic.2020.112970. Epub 2020 Feb 15. Ultramicroscopy. 2020. PMID: 32114315 Free article.

7

Publisher Correction: Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells.

Roble AA, Patra SK, Massabuau F, Frentrup M, Leontiadou MA, Dawson P, Kappers MJ, Oliver RA, Graham DM, Schulz S. Roble AA, et al. Sci Rep. 2020 Mar 24;10(1):5667. doi: 10.1038/s41598-020-62494-x. Sci Rep. 2020. PMID: 32205854 Free PMC article.

8

Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties.

Massabuau FC, Rhode SL, Horton MK, O'Hanlon TJ, Kovács A, Zielinski MS, Kappers MJ, Dunin-Borkowski RE, Humphreys CJ, Oliver RA. Massabuau FC, et al. Nano Lett. 2017 Aug 9;17(8):4846-4852. doi: 10.1021/acs.nanolett.7b01697. Epub 2017 Jul 18. Nano Lett. 2017. PMID: 28707893 Free article.

9

Dislocations at coalescence boundaries in heteroepitaxial GaN/sapphire studied after the epitaxial layer has completely coalesced.

O'Hanlon TJ, Zhu T, Massabuau FC, Oliver RA. O'Hanlon TJ, et al. Among authors: massabuau fc. Ultramicroscopy. 2021 Dec;231:113258. doi: 10.1016/j.ultramic.2021.113258. Epub 2021 Mar 11. Ultramicroscopy. 2021. PMID: 33812707 Free article.

10

Crystalline Interlayers for Reducing the Effective Thermal Boundary Resistance in GaN-on-Diamond.

Field DE, Cuenca JA, Smith M, Fairclough SM, Massabuau FC, Pomeroy JW, Williams O, Oliver RA, Thayne I, Kuball M. Field DE, et al. Among authors: massabuau fc. ACS Appl Mater Interfaces. 2020 Dec 2;12(48):54138-54145. doi: 10.1021/acsami.0c10129. Epub 2020 Nov 16. ACS Appl Mater Interfaces. 2020. PMID: 33196180 Free article.

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