Bucamp A - Search Results

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In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy.

Bucamp A, Coinon C, Lepilliet S, Troadec D, Patriarche G, Diallo MH, Avramovic V, Haddadi K, Wallart X, Desplanque L. Bucamp A, et al. Nanotechnology. 2022 Jan 12;33(14). doi: 10.1088/1361-6528/ac45c5. Nanotechnology. 2022. PMID: 34937011

Bottom-up fabrication of InAs-on-nothing MOSFET using selective area molecular beam epitaxy.

Pastorek M, Olivier A, Lechaux Y, Wichmann N, Karatsori T, Fahed M, Bucamp A, Addad A, Troadec D, Ghibaudo G, Desplanque L, Wallart X, Bollaert S. Pastorek M, et al. Among authors: bucamp a. Nanotechnology. 2019 Jan 18;30(3):035301. doi: 10.1088/1361-6528/aaebbd. Nanotechnology. 2019. PMID: 30452388

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate.

Desplanque L, Bucamp A, Troadec D, Patriarche G, Wallart X. Desplanque L, et al. Among authors: bucamp a. Nanotechnology. 2018 Jul 27;29(30):305705. doi: 10.1088/1361-6528/aac321. Epub 2018 May 8. Nanotechnology. 2018. PMID: 29738312

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