Bae JH - Search Results

1

Comprehensive and accurate analysis of the working principle in ferroelectric tunnel junctions using low-frequency noise spectroscopy.

Shin W, Min KK, Bae JH, Yim J, Kwon D, Kim Y, Yu J, Hwang J, Park BG, Kwon D, Lee JH. Shin W, et al. Among authors: bae jh. Nanoscale. 2022 Feb 10;14(6):2177-2185. doi: 10.1039/d1nr06525d. Nanoscale. 2022. PMID: 34989737

2

Phenomenological analysis of random telegraph noise in amorphous TiOx-based bipolar resistive switching random access memory devices.

Lee JK, Lee JW, Bae JH, Park J, Chung SW, Roh JS, Hong SJ, Lee JH. Lee JK, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2012 Jul;12(7):5392-6. doi: 10.1166/jnn.2012.6249. J Nanosci Nanotechnol. 2012. PMID: 22966577

3

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

Bae JH, Lee JH. Bae JH, et al. J Nanosci Nanotechnol. 2016 May;16(5):4919-23. doi: 10.1166/jnn.2016.12258. J Nanosci Nanotechnol. 2016. PMID: 27483846

4

Observation of physisorption in a high-performance FET-type oxygen gas sensor operating at room temperature.

Hong S , Shin J , Hong Y , Wu M , Jang D , Jeong Y , Jung G , Bae JH , Jang HW , Lee JH . Hong S , et al. Among authors: bae jh. Nanoscale. 2018 Sep 27;10(37):18019-18027. doi: 10.1039/c8nr04472d. Nanoscale. 2018. PMID: 30226514

5

A Split-Gate Positive Feedback Device With an Integrate-and-Fire Capability for a High-Density Low-Power Neuron Circuit.

Choi KB, Woo SY, Kang WM, Lee S, Kim CH, Bae JH, Lim S, Lee JH. Choi KB, et al. Among authors: bae jh. Front Neurosci. 2018 Oct 9;12:704. doi: 10.3389/fnins.2018.00704. eCollection 2018. Front Neurosci. 2018. PMID: 30356702 Free PMC article.

6

Emerging memory technologies for neuromorphic computing.

Kim CH, Lim S, Woo SY, Kang WM, Seo YT, Lee ST, Lee S, Kwon D, Oh S, Noh Y, Kim H, Kim J, Bae JH, Lee JH. Kim CH, et al. Among authors: bae jh. Nanotechnology. 2019 Jan 18;30(3):032001. doi: 10.1088/1361-6528/aae975. Epub 2018 Nov 13. Nanotechnology. 2019. PMID: 30422812

7

Gated Schottky Diode-Type Synaptic Device with a Field-Plate Structure to Reduce the Forward Current.

Bae JH, Lim S, Kwon D, Lee ST, Kim H, Lee JH. Bae JH, et al. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6135-6138. doi: 10.1166/jnn.2019.17003. J Nanosci Nanotechnol. 2019. PMID: 31026923

8

Humidity-Sensitive Field Effect Transistor with In₂O₃ Nanoparticles as a Sensing Layer.

Hong S, Shin J, Hong Y, Wu M, Jeong Y, Jang D, Jung G, Bae JH, Lee JH. Hong S, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2019 Oct 1;19(10):6656-6662. doi: 10.1166/jnn.2019.17092. J Nanosci Nanotechnol. 2019. PMID: 31027006

9

Effect of Word-Line Bias on Linearity of Multi-Level Conductance Steps for Multi-Layer Neural Networks Based on NAND Flash Cells.

Lee ST, Lim S, Choi N, Bae JH, Kwon D, Kim HS, Park BG, Lee JH. Lee ST, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2020 Jul 1;20(7):4138-4142. doi: 10.1166/jnn.2020.17791. J Nanosci Nanotechnol. 2020. PMID: 31968431

10

Implementation of Synaptic Device Using Various High-k Gate Dielectric Stacks.

Seo YT, Park MK, Bae JH, Park BG, Lee JH. Seo YT, et al. Among authors: bae jh. J Nanosci Nanotechnol. 2020 Jul 1;20(7):4292-4297. doi: 10.1166/jnn.2020.17788. J Nanosci Nanotechnol. 2020. PMID: 31968460

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