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A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect Transistors.
Zhang Z, Luo Y, Cui Y, Yang H, Zhang Q, Xu G, Wu Z, Xiang J, Liu Q, Yin H, Mao S, Wang X, Li J, Zhang Y, Luo Q, Gao J, Xiong W, Liu J, Li Y, Li J, Luo J, Wang W. Zhang Z, et al. Among authors: xu g. ACS Appl Mater Interfaces. 2022 Feb 9;14(5):6967-6976. doi: 10.1021/acsami.1c20189. Epub 2022 Jan 25. ACS Appl Mater Interfaces. 2022. PMID: 35076195
Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Zhang Q, Gu J, Xu R, Cao L, Li J, Wu Z, Wang G, Yao J, Zhang Z, Xiang J, He X, Kong Z, Yang H, Tian J, Xu G, Mao S, Radamson HH, Yin H, Luo J. Zhang Q, et al. Among authors: xu r, xu g. Nanomaterials (Basel). 2021 Mar 5;11(3):646. doi: 10.3390/nano11030646. Nanomaterials (Basel). 2021. PMID: 33808024 Free PMC article.
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