Ohkawa K - Search Results

1

Study on the effect of size on InGaN red micro-LEDs.

Horng RH, Ye CX, Chen PW, Iida D, Ohkawa K, Wu YR, Wuu DS. Horng RH, et al. Among authors: ohkawa k. Sci Rep. 2022 Jan 25;12(1):1324. doi: 10.1038/s41598-022-05370-0. Sci Rep. 2022. PMID: 35079062 Free PMC article.

2

Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes.

Zhuang Z, Iida D, Kirilenko P, Velazquez-Rizo M, Ohkawa K. Zhuang Z, et al. Among authors: ohkawa k. Opt Express. 2020 Apr 13;28(8):12311-12321. doi: 10.1364/OE.389725. Opt Express. 2020. PMID: 32403729 Free article.

3

Photoelectrochemical and crystalline properties of a GaN photoelectrode loaded with α-Fe₂O₃ as cocatalyst.

Velazquez-Rizo M, Iida D, Ohkawa K. Velazquez-Rizo M, et al. Among authors: ohkawa k. Sci Rep. 2020 Jul 28;10(1):12586. doi: 10.1038/s41598-020-69419-8. Sci Rep. 2020. PMID: 32724225 Free PMC article.

4

Enhanced performance of N-polar AlGaN-based deep-ultraviolet light-emitting diodes.

Zhuang Z, Iida D, Ohkawa K. Zhuang Z, et al. Among authors: ohkawa k. Opt Express. 2020 Oct 12;28(21):30423-30431. doi: 10.1364/OE.403168. Opt Express. 2020. PMID: 33115044 Free article.

5

Investigation of InGaN-based red/green micro-light-emitting diodes.

Zhuang Z, Iida D, Ohkawa K. Zhuang Z, et al. Among authors: ohkawa k. Opt Lett. 2021 Apr 15;46(8):1912-1915. doi: 10.1364/OL.422579. Opt Lett. 2021. PMID: 33857102

6

Improved performance of InGaN-based red light-emitting diodes by micro-hole arrays.

Zhuang Z, Iida D, Kirilenko P, Ohkawa K. Zhuang Z, et al. Among authors: ohkawa k. Opt Express. 2021 Sep 13;29(19):29780-29788. doi: 10.1364/OE.435556. Opt Express. 2021. PMID: 34614716 Free article.

7

Photoluminescence of InGaN-based red multiple quantum wells.

Hou X, Fan S, Iida D, Mei Y, Zhang B, Ohkawa K. Hou X, et al. Among authors: ohkawa k. Opt Express. 2021 Sep 13;29(19):30237-30243. doi: 10.1364/OE.439025. Opt Express. 2021. PMID: 34614750 Free article.

8

Ultra-small InGaN green micro-light-emitting diodes fabricated by selective passivation of p-GaN.

Zhuang Z, Iida D, Velazquez-Rizo M, Ohkawa K. Zhuang Z, et al. Among authors: ohkawa k. Opt Lett. 2021 Oct 15;46(20):5092-5095. doi: 10.1364/OL.438009. Opt Lett. 2021. PMID: 34653123

9

Analysis of the n-GaN electrochemical etching process and its mechanism in oxalic acid.

Shushanian A, Iida D, Zhuang Z, Han Y, Ohkawa K. Shushanian A, et al. Among authors: ohkawa k. RSC Adv. 2022 Feb 7;12(8):4648-4655. doi: 10.1039/d1ra07992a. eCollection 2022 Feb 3. RSC Adv. 2022. PMID: 35425502 Free PMC article.

10

Improvement of optical properties of InGaN-based red multiple quantum wells.

Hou X, Yang T, Fan SS, Xu H, Iida D, Liu YJ, Mei Y, Weng GE, Chen SQ, Zhang BP, Ohkawa K. Hou X, et al. Among authors: ohkawa k. Opt Express. 2023 May 22;31(11):18567-18575. doi: 10.1364/OE.488681. Opt Express. 2023. PMID: 37381566 Free article.

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