Grzanka E - Search Results

1

Luminescence Properties of Nano Zinc Oxide Doped with Al(III) Ions Obtained in Microwave-Assisted Hydrothermal Synthesis.

Strachowski T, Grzanka E, Mizeracki J, Chlanda A, Baran M, Małek M, Onyszko K, Januszewski B, Przybysz M. Strachowski T, et al. Among authors: grzanka e. Materials (Basel). 2022 Feb 14;15(4):1403. doi: 10.3390/ma15041403. Materials (Basel). 2022. PMID: 35207950 Free PMC article.

2

Microwave-Assisted Hydrothermal Synthesis of Zinc-Aluminum Spinel ZnAl₂O₄.

Strachowski T, Grzanka E, Mizeracki J, Chlanda A, Baran M, Małek M, Niedziałek M. Strachowski T, et al. Among authors: grzanka e. Materials (Basel). 2021 Dec 29;15(1):245. doi: 10.3390/ma15010245. Materials (Basel). 2021. PMID: 35009391 Free PMC article.

3

Influence of Showerhead-Sample Distance (GAP) in MOVPE Close Coupled Showerhead Reactor on GaN Growth.

Czernecki R, Moszak K, Olszewski W, Grzanka E, Leszczynski M. Czernecki R, et al. Among authors: grzanka e. Materials (Basel). 2019 Oct 16;12(20):3375. doi: 10.3390/ma12203375. Materials (Basel). 2019. PMID: 31623121 Free PMC article.

4

Modeling of the Point Defect Migration across the AlN/GaN Interfaces-Ab Initio Study.

Hrytsak R, Kempisty P, Grzanka E, Leszczynski M, Sznajder M. Hrytsak R, et al. Among authors: grzanka e. Materials (Basel). 2022 Jan 9;15(2):478. doi: 10.3390/ma15020478. Materials (Basel). 2022. PMID: 35057196 Free PMC article.

5

Indium Incorporation into InGaN Quantum Wells Grown on GaN Narrow Stripes.

Sarzyński M, Grzanka E, Grzanka S, Targowski G, Czernecki R, Reszka A, Holy V, Nitta S, Liu Z, Amano H, Leszczyński M. Sarzyński M, et al. Among authors: grzanka s, grzanka e. Materials (Basel). 2019 Aug 14;12(16):2583. doi: 10.3390/ma12162583. Materials (Basel). 2019. PMID: 31416124 Free PMC article.

6

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs.

Grabowski M, Grzanka E, Grzanka S, Lachowski A, Smalc-Koziorowska J, Czernecki R, Hrytsak R, Moneta J, Gawlik G, Turos A, Leszczyński M. Grabowski M, et al. Among authors: grzanka s, grzanka e. Sci Rep. 2021 Jan 28;11(1):2458. doi: 10.1038/s41598-021-81017-w. Sci Rep. 2021. PMID: 33510188 Free PMC article.

7

Role of Metal Vacancies in the Mechanism of Thermal Degradation of InGaN Quantum Wells.

Smalc-Koziorowska J, Grzanka E, Lachowski A, Hrytsak R, Grabowski M, Grzanka S, Kret S, Czernecki R, Turski H, Marona L, Markurt T, Schulz T, Albrecht M, Leszczynski M. Smalc-Koziorowska J, et al. Among authors: grzanka e. ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7476-7484. doi: 10.1021/acsami.0c21293. Epub 2021 Feb 2. ACS Appl Mater Interfaces. 2021. PMID: 33529520

8

Quantum-confined Stark effect and mechanisms of its screening in InGaN/GaN light-emitting diodes with a tunnel junction.

Pieniak K, Chlipala M, Turski H, Trzeciakowski W, Muziol G, Staszczak G, Kafar A, Makarowa I, Grzanka E, Grzanka S, Skierbiszewski C, Suski T. Pieniak K, et al. Among authors: grzanka e. Opt Express. 2021 Jan 18;29(2):1824-1837. doi: 10.1364/OE.415258. Opt Express. 2021. PMID: 33726388 Free article.

9

Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN.

Kamiński P, Turos A, Kozłowski R, Stefańska-Skrobas K, Żelazko J, Grzanka E. Kamiński P, et al. Among authors: grzanka e. Sci Rep. 2024 Jun 20;14(1):14272. doi: 10.1038/s41598-024-65142-w. Sci Rep. 2024. PMID: 38902307 Free PMC article.

10

Toward Red Light Emitters Based on InGaN-Containing Short-Period Superlattices with InGaN Buffers.

Staszczak G, Gorczyca I, Grzanka E, Smalc-Koziorowska J, Targowski G, Suski T. Staszczak G, et al. Among authors: grzanka e. Materials (Basel). 2023 Nov 27;16(23):7386. doi: 10.3390/ma16237386. Materials (Basel). 2023. PMID: 38068130 Free PMC article.

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