Coinon C - Search Results

1

Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II-VI nanocrystals.

Khalili A, Cavallo M, Dang TH, Dabard C, Zhang H, Bossavit E, Abadie C, Prado Y, Xu XZ, Ithurria S, Vincent G, Coinon C, Desplanque L, Lhuillier E. Khalili A, et al. Among authors: coinon c. J Chem Phys. 2023 Mar 7;158(9):094702. doi: 10.1063/5.0141328. J Chem Phys. 2023. PMID: 36889960

2

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

Fahed M, Desplanque L, Coinon C, Troadec D, Wallart X. Fahed M, et al. Among authors: coinon c. Nanotechnology. 2015 Jul 24;26(29):295301. doi: 10.1088/0957-4484/26/29/295301. Epub 2015 Jul 2. Nanotechnology. 2015. PMID: 26134951

3

Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping.

Desplanque L, Coinon C, Troadec D, Ruterana P, Patriarche G, Bonato L, Bimberg D, Wallart X. Desplanque L, et al. Among authors: coinon c. Nanotechnology. 2017 Jun 2;28(22):225601. doi: 10.1088/1361-6528/aa6f41. Epub 2017 May 8. Nanotechnology. 2017. PMID: 28480873

4

Engineering a Robust Flat Band in III-V Semiconductor Heterostructures.

Franchina Vergel NA, Post LC, Sciacca D, Berthe M, Vaurette F, Lambert Y, Yarekha D, Troadec D, Coinon C, Fleury G, Patriarche G, Xu T, Desplanque L, Wallart X, Vanmaekelbergh D, Delerue C, Grandidier B. Franchina Vergel NA, et al. Among authors: coinon c. Nano Lett. 2021 Jan 13;21(1):680-685. doi: 10.1021/acs.nanolett.0c04268. Epub 2020 Dec 18. Nano Lett. 2021. PMID: 33337891

5

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy.

Bucamp A, Coinon C, Lepilliet S, Troadec D, Patriarche G, Diallo MH, Avramovic V, Haddadi K, Wallart X, Desplanque L. Bucamp A, et al. Among authors: coinon c. Nanotechnology. 2022 Jan 12;33(14). doi: 10.1088/1361-6528/ac45c5. Nanotechnology. 2022. PMID: 34937011

6

Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell.

Khelifi W, Coinon C, Berthe M, Troadec D, Patriarche G, Wallart X, Grandidier B, Desplanque L. Khelifi W, et al. Among authors: coinon c. Nanotechnology. 2023 Apr 12;34(26). doi: 10.1088/1361-6528/acc810. Nanotechnology. 2023. PMID: 36975178

7

Ultrahigh vacuum Raman spectroscopy for the preparation of III-V semiconductor surfaces.

Khelifi W, Canneson D, Berthe M, Legendre S, Coinon C, Desplanque L, Wallart X, Biadala L, Grandidier B, Capiod P. Khelifi W, et al. Among authors: coinon c. Rev Sci Instrum. 2023 Dec 1;94(12):123702. doi: 10.1063/5.0152031. Rev Sci Instrum. 2023. PMID: 38051176

8

Nonstoichiometric Low-Temperature Grown GaAs Nanowires.

Díaz Álvarez A, Xu T, Tütüncüoglu G, Demonchaux T, Nys JP, Berthe M, Matteini F, Potts HA, Troadec D, Patriarche G, Lampin JF, Coinon C, Fontcuberta i Morral A, Dunin-Borkowski RE, Ebert P, Grandidier B. Díaz Álvarez A, et al. Among authors: coinon c. Nano Lett. 2015 Oct 14;15(10):6440-5. doi: 10.1021/acs.nanolett.5b01802. Epub 2015 Sep 9. Nano Lett. 2015. PMID: 26339987

9

InGaAs quantum dot chains grown by twofold selective area molecular beam epitaxy.

Barbot C, Rondeau-Body C, Coinon C, Deblock Y, Tilmant P, Vaurette F, Yarekha D, Berthe M, Thomas L, Diesinger H, Capiod P, Desplanque L, Grandidier B. Barbot C, et al. Among authors: coinon c. Nanotechnology. 2024 Jul 15;35(39). doi: 10.1088/1361-6528/ad5f34. Nanotechnology. 2024. PMID: 38964286

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