Desplanque L - Search Results

1

Mid-wave infrared sensitized InGaAs using intraband transition in doped colloidal II-VI nanocrystals.

Khalili A, Cavallo M, Dang TH, Dabard C, Zhang H, Bossavit E, Abadie C, Prado Y, Xu XZ, Ithurria S, Vincent G, Coinon C, Desplanque L, Lhuillier E. Khalili A, et al. Among authors: desplanque l. J Chem Phys. 2023 Mar 7;158(9):094702. doi: 10.1063/5.0141328. J Chem Phys. 2023. PMID: 36889960

2

Coherent tunnelling across a quantum point contact in the quantum Hall regime.

Martins F, Faniel S, Rosenow B, Sellier H, Huant S, Pala MG, Desplanque L, Wallart X, Bayot V, Hackens B. Martins F, et al. Among authors: desplanque l. Sci Rep. 2013;3:1416. doi: 10.1038/srep01416. Sci Rep. 2013. PMID: 23475303 Free PMC article.

3

Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface.

Wang Y, Ruterana P, Chen J, Kret S, El Kazzi S, Genevois C, Desplanque L, Wallart X. Wang Y, et al. Among authors: desplanque l. ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9760-4. doi: 10.1021/am4028907. Epub 2013 Sep 25. ACS Appl Mater Interfaces. 2013. PMID: 24024581

4

Influence of nanoscale faceting on the tunneling properties of near broken gap InAs/AlGaSb heterojunctions grown by selective area epitaxy.

Desplanque L, Fahed M, Han X, Chinni VK, Troadec D, Chauvat MP, Ruterana P, Wallart X. Desplanque L, et al. Nanotechnology. 2014 Nov 21;25(46):465302. doi: 10.1088/0957-4484/25/46/465302. Epub 2014 Oct 30. Nanotechnology. 2014. PMID: 25354494

5

Imaging Coulomb islands in a quantum Hall interferometer.

Hackens B, Martins F, Faniel S, Dutu CA, Sellier H, Huant S, Pala M, Desplanque L, Wallart X, Bayot V. Hackens B, et al. Among authors: desplanque l. Nat Commun. 2010 Jul 27;1:39. doi: 10.1038/ncomms1038. Nat Commun. 2010. PMID: 20975700 Free article.

6

Triangular nanoperforation and band engineering of InGaAs quantum wells: a lithographic route toward Dirac cones in III-V semiconductors.

Post LC, Xu T, Franchina Vergel NA, Tadjine A, Lambert Y, Vaurette F, Yarekha D, Desplanque L, Stiévenard D, Wallart X, Grandidier B, Delerue C, Vanmaekelbergh D. Post LC, et al. Among authors: desplanque l. Nanotechnology. 2019 Apr 12;30(15):155301. doi: 10.1088/1361-6528/aafd3f. Epub 2019 Jan 10. Nanotechnology. 2019. PMID: 30630145

7

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

Fahed M, Desplanque L, Coinon C, Troadec D, Wallart X. Fahed M, et al. Among authors: desplanque l. Nanotechnology. 2015 Jul 24;26(29):295301. doi: 10.1088/0957-4484/26/29/295301. Epub 2015 Jul 2. Nanotechnology. 2015. PMID: 26134951

8

Morphology and valence band offset of GaSb quantum dots grown on GaP(001) and their evolution upon capping.

Desplanque L, Coinon C, Troadec D, Ruterana P, Patriarche G, Bonato L, Bimberg D, Wallart X. Desplanque L, et al. Nanotechnology. 2017 Jun 2;28(22):225601. doi: 10.1088/1361-6528/aa6f41. Epub 2017 May 8. Nanotechnology. 2017. PMID: 28480873

9

Engineering a Robust Flat Band in III-V Semiconductor Heterostructures.

Franchina Vergel NA, Post LC, Sciacca D, Berthe M, Vaurette F, Lambert Y, Yarekha D, Troadec D, Coinon C, Fleury G, Patriarche G, Xu T, Desplanque L, Wallart X, Vanmaekelbergh D, Delerue C, Grandidier B. Franchina Vergel NA, et al. Among authors: desplanque l. Nano Lett. 2021 Jan 13;21(1):680-685. doi: 10.1021/acs.nanolett.0c04268. Epub 2020 Dec 18. Nano Lett. 2021. PMID: 33337891

10

In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxy.

Bucamp A, Coinon C, Lepilliet S, Troadec D, Patriarche G, Diallo MH, Avramovic V, Haddadi K, Wallart X, Desplanque L. Bucamp A, et al. Among authors: desplanque l. Nanotechnology. 2022 Jan 12;33(14). doi: 10.1088/1361-6528/ac45c5. Nanotechnology. 2022. PMID: 34937011

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