Wallart X - Search Results

1

Improving the intrinsic conductance of selective area grown in-plane InAs nanowires with a GaSb shell.

Khelifi W, Coinon C, Berthe M, Troadec D, Patriarche G, Wallart X, Grandidier B, Desplanque L. Khelifi W, et al. Among authors: wallart x. Nanotechnology. 2023 Apr 12;34(26). doi: 10.1088/1361-6528/acc810. Nanotechnology. 2023. PMID: 36975178

2

Exploring electronic structure of one-atom thick polycrystalline graphene films: a nano angle resolved photoemission study.

Avila J, Razado I, Lorcy S, Fleurier R, Pichonat E, Vignaud D, Wallart X, Asensio MC. Avila J, et al. Among authors: wallart x. Sci Rep. 2013;3:2439. doi: 10.1038/srep02439. Sci Rep. 2013. PMID: 23942471 Free PMC article.

3

Auger and electron-energy-loss spectroscopy study of interface formation in the Ti-Si system.

Wallart X, Nys JP, Zeng HS, Dalmai G, Lefebvre I I, Lannoo M. Wallart X, et al. Phys Rev B Condens Matter. 1990 Feb 15;41(5):3087-3096. doi: 10.1103/physrevb.41.3087. Phys Rev B Condens Matter. 1990. PMID: 9994082 No abstract available.

4

Dwell-time-limited coherence in open quantum dots.

Hackens B, Faniel S, Gustin C, Wallart X, Bollaert S, Cappy A, Bayot V. Hackens B, et al. Among authors: wallart x. Phys Rev Lett. 2005 Apr 15;94(14):146802. doi: 10.1103/PhysRevLett.94.146802. Epub 2005 Apr 13. Phys Rev Lett. 2005. PMID: 15904090

5

Semicarbazide-functionalized Si(111) surfaces for the site-specific immobilization of peptides.

Coffinier Y, Olivier C, Perzyna A, Grandidier B, Wallart X, Durand JO, Melnyk O, Stiévenard D. Coffinier Y, et al. Among authors: wallart x. Langmuir. 2005 Feb 15;21(4):1489-96. doi: 10.1021/la047781s. Langmuir. 2005. PMID: 15697299

6

Gold-free growth of GaAs nanowires on silicon: arrays and polytypism.

Plissard S, Dick KA, Larrieu G, Godey S, Addad A, Wallart X, Caroff P. Plissard S, et al. Among authors: wallart x. Nanotechnology. 2010 Sep 24;21(38):385602. doi: 10.1088/0957-4484/21/38/385602. Epub 2010 Aug 27. Nanotechnology. 2010. PMID: 20798467

7

Faceting, composition and crystal phase evolution in III-V antimonide nanowire heterostructures revealed by combining microscopy techniques.

Xu T, Dick KA, Plissard S, Nguyen TH, Makoudi Y, Berthe M, Nys JP, Wallart X, Grandidier B, Caroff P. Xu T, et al. Among authors: wallart x. Nanotechnology. 2012 Mar 9;23(9):095702. doi: 10.1088/0957-4484/23/9/095702. Epub 2012 Feb 10. Nanotechnology. 2012. PMID: 22322440

8

Strain relief and growth optimization of GaSb on GaP by molecular beam epitaxy.

Wang Y, Ruterana P, Chen J, Desplanque L, El Kazzi S, Wallart X. Wang Y, et al. Among authors: wallart x. J Phys Condens Matter. 2012 Aug 22;24(33):335802. doi: 10.1088/0953-8984/24/33/335802. Epub 2012 Jul 27. J Phys Condens Matter. 2012. PMID: 22836299

9

Numerical and experimental assessment of charge control in III-V nano-metal-oxide-semiconductor field-effect transistor.

Shi M, Saint-Martin J, Bournel A, Querlioz D, Dollfus P, Mo J, Wichmann N, Desplanque L, Wallart X, Danneville F, Bollaert S. Shi M, et al. Among authors: wallart x. J Nanosci Nanotechnol. 2013 Feb;13(2):771-5. doi: 10.1166/jnn.2013.6115. J Nanosci Nanotechnol. 2013. PMID: 23646513

10

Antimony-mediated control of misfit dislocations and strain at the highly lattice mismatched GaSb/GaAs interface.

Wang Y, Ruterana P, Chen J, Kret S, El Kazzi S, Genevois C, Desplanque L, Wallart X. Wang Y, et al. Among authors: wallart x. ACS Appl Mater Interfaces. 2013 Oct 9;5(19):9760-4. doi: 10.1021/am4028907. Epub 2013 Sep 25. ACS Appl Mater Interfaces. 2013. PMID: 24024581

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