Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance.
Tian J, Wang Q, Huang X, Tang J, Chu Y, Wang S, Shen C, Zhao Y, Li N, Liu J, Ji Y, Huang B, Peng Y, Yang R, Yang W, Watanabe K, Taniguchi T, Bai X, Shi D, Du L, Zhang G.
Tian J, et al. Among authors: shi d.
Nano Lett. 2023 Apr 12;23(7):2764-2770. doi: 10.1021/acs.nanolett.3c00031. Epub 2023 Apr 3.
Nano Lett. 2023.
PMID: 37010357