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Low power flexible monolayer MoS2 integrated circuits.
Tang J, Wang Q, Tian J, Li X, Li N, Peng Y, Li X, Zhao Y, He C, Wu S, Li J, Guo Y, Huang B, Chu Y, Ji Y, Shang D, Du L, Yang R, Yang W, Bai X, Shi D, Zhang G. Tang J, et al. Among authors: huang b. Nat Commun. 2023 Jun 19;14(1):3633. doi: 10.1038/s41467-023-39390-9. Nat Commun. 2023. PMID: 37336907 Free PMC article.
In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.
Tang J, Wei Z, Wang Q, Wang Y, Han B, Li X, Huang B, Liao M, Liu J, Li N, Zhao Y, Shen C, Guo Y, Bai X, Gao P, Yang W, Chen L, Wu K, Yang R, Shi D, Zhang G. Tang J, et al. Among authors: huang b. Small. 2020 Oct;16(42):e2004276. doi: 10.1002/smll.202004276. Epub 2020 Sep 17. Small. 2020. PMID: 32939960
Wafer-Scale Oxygen-Doped MoS2 Monolayer.
Wei Z, Tang J, Li X, Chi Z, Wang Y, Wang Q, Han B, Li N, Huang B, Li J, Yu H, Yuan J, Chen H, Sun J, Chen L, Wu K, Gao P, He C, Yang W, Shi D, Yang R, Zhang G. Wei Z, et al. Among authors: huang b. Small Methods. 2021 Jun;5(6):e2100091. doi: 10.1002/smtd.202100091. Epub 2021 Apr 10. Small Methods. 2021. PMID: 34927920
Scaling of MoS2 Transistors and Inverters to Sub-10 nm Channel Length with High Performance.
Tian J, Wang Q, Huang X, Tang J, Chu Y, Wang S, Shen C, Zhao Y, Li N, Liu J, Ji Y, Huang B, Peng Y, Yang R, Yang W, Watanabe K, Taniguchi T, Bai X, Shi D, Du L, Zhang G. Tian J, et al. Among authors: huang b, huang x. Nano Lett. 2023 Apr 12;23(7):2764-2770. doi: 10.1021/acs.nanolett.3c00031. Epub 2023 Apr 3. Nano Lett. 2023. PMID: 37010357
Medium-scale flexible integrated circuits based on 2D semiconductors.
Peng Y, Cui C, Li L, Wang Y, Wang Q, Tian J, Huang Z, Huang B, Zhang Y, Li X, Tang J, Chu Y, Yang W, Shi D, Du L, Li N, Zhang G. Peng Y, et al. Among authors: huang b, huang z. Nat Commun. 2024 Dec 30;15(1):10833. doi: 10.1038/s41467-024-55142-9. Nat Commun. 2024. PMID: 39737988 Free PMC article.
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