Zhao C - Search Results

1

Study of Selective Dry Etching Effects of 15-Cycle Si_0.7Ge_0.3/Si Multilayer Structure in Gate-All-Around Transistor Process.

Liu E, Li J, Zhou N, Chen R, Shao H, Gao J, Zhang Q, Kong Z, Lin H, Zhang C, Lai P, Yang C, Liu Y, Wang G, Zhao C, Yang T, Yin H, Li J, Luo J, Wang W. Liu E, et al. Among authors: zhao c. Nanomaterials (Basel). 2023 Jul 21;13(14):2127. doi: 10.3390/nano13142127. Nanomaterials (Basel). 2023. PMID: 37513138 Free PMC article.

2

Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.

Wang G, Luo J, Qin C, Liang R, Xu Y, Liu J, Li J, Yin H, Yan J, Zhu H, Xu J, Zhao C, Radamson HH, Ye T. Wang G, et al. Among authors: zhao c. Nanoscale Res Lett. 2017 Dec;12(1):123. doi: 10.1186/s11671-017-1908-0. Epub 2017 Feb 16. Nanoscale Res Lett. 2017. PMID: 28228008 Free PMC article.

3

Enhanced End-Contacts by Helium Ion Bombardment to Improve Graphene-Metal Contacts.

Jia K, Su Y, Zhan J, Shahzad K, Zhu H, Zhao C, Luo J. Jia K, et al. Among authors: zhao c. Nanomaterials (Basel). 2016 Aug 26;6(9):158. doi: 10.3390/nano6090158. Nanomaterials (Basel). 2016. PMID: 28335286 Free PMC article.

4

pMOSFETs Featuring ALD W Filling Metal Using SiH₄ and B₂H₆ Precursors in 22 nm Node CMOS Technology.

Wang G, Luo J, Liu J, Yang T, Xu Y, Li J, Yin H, Yan J, Zhu H, Zhao C, Ye T, Radamson HH. Wang G, et al. Among authors: zhao c. Nanoscale Res Lett. 2017 Dec;12(1):306. doi: 10.1186/s11671-017-2080-2. Epub 2017 Apr 26. Nanoscale Res Lett. 2017. PMID: 28449546 Free PMC article.

5

Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

Fu C, Zhou X, Wang Y, Xu P, Xu M, Wu D, Luo J, Zhao C, Zhang SL. Fu C, et al. Among authors: zhao c. Materials (Basel). 2016 Apr 27;9(5):315. doi: 10.3390/ma9050315. Materials (Basel). 2016. PMID: 28773440 Free PMC article.

6

Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts.

Shahzad K, Jia K, Zhao C, Wang D, Usman M, Luo J. Shahzad K, et al. Among authors: zhao c. Materials (Basel). 2019 Nov 27;12(23):3928. doi: 10.3390/ma12233928. Materials (Basel). 2019. PMID: 31783612 Free PMC article.

7

An Improved Rosin Transfer Process for the Reduction of Residue Particles for Graphene.

Shahzad K, Jia K, Zhao C, Yan X, Yadong Z, Usman M, Luo J. Shahzad K, et al. Among authors: zhao c. Nanoscale Res Lett. 2020 Apr 17;15(1):85. doi: 10.1186/s11671-020-03312-1. Nanoscale Res Lett. 2020. PMID: 32303942 Free PMC article.

8

In(Ga)N Nanostructures and Devices Grown by Molecular Beam Epitaxy and Metal-Assisted Photochemical Etching.

Soopy AKK, Li Z, Tang T, Sun J, Xu B, Zhao C, Najar A. Soopy AKK, et al. Among authors: zhao c. Nanomaterials (Basel). 2021 Jan 7;11(1):126. doi: 10.3390/nano11010126. Nanomaterials (Basel). 2021. PMID: 33430484 Free PMC article. Review.

9

Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration.

Mao S, Gao J, He X, Liu W, Liu J, Wang G, Zhou N, Luo Y, Cao L, Zhang R, Liu H, Li X, Li Y, Wu Z, Li J, Luo J, Zhao C, Wang W, Yin H. Mao S, et al. Among authors: zhao c. Nanomaterials (Basel). 2022 Apr 5;12(7):1218. doi: 10.3390/nano12071218. Nanomaterials (Basel). 2022. PMID: 35407340 Free PMC article.

10

A Voltage-Modulated Nanostrip Spin-Wave Filter and Spin Logic Device Thereof.

Li H, Dong B, Hu Q, Zhang Y, Wang G, Meng H, Zhao C. Li H, et al. Among authors: zhao c. Nanomaterials (Basel). 2022 Oct 30;12(21):3838. doi: 10.3390/nano12213838. Nanomaterials (Basel). 2022. PMID: 36364614 Free PMC article.

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